TY - JOUR
T1 - ZnO seed layers prepared by DC reactive magnetron sputtering to be applied as electrodeposition substrates
AU - Siopa, D.
AU - Sério, S.
AU - Jorge, M. E. Melo
AU - Viana, A. S.
AU - Gomes, A.
N1 - The authors acknowledge the financial support from FEDER, through Programa Operacional Factores de Competitividade - COMPETE and Funda??o para a Ci?ncia e a Tecnologia - FCT, for the projects UID/MULTI/00612/2013 and UID/FIS/00068/2013.
PY - 2016/1/1
Y1 - 2016/1/1
N2 - ZnO seed layers have been prepared by DC reactive magnetron sputtering on glass/SnO2:F substrates at room temperature. The influence of the deposition time and sputtering power on the electrochemical behavior, structural, morphological and optical properties of the coatings were systematically investigated using different techniques. The characterization of the sampleswasmade after thermal treatment at 300°C for 3 h. The seed layers are transparent, composed by textured ZnO with different grain sizes ranging from 30 to 90 nm which makes them promising to be applied as electrodeposition substrates. The obtained results demonstrate that their (photo)electrochemical properties, fundamental for the next deposition step, are strongly related to the sputtering conditions used. The results reveal that the largest photocurrent as well as the enhanced electrical conductivity was obtained for the films prepared at lowest sputtering power, 120W. While, the seed layer prepared at 300Wshows the lowest charge carrier density and high resistance to the photodissolution process.
AB - ZnO seed layers have been prepared by DC reactive magnetron sputtering on glass/SnO2:F substrates at room temperature. The influence of the deposition time and sputtering power on the electrochemical behavior, structural, morphological and optical properties of the coatings were systematically investigated using different techniques. The characterization of the sampleswasmade after thermal treatment at 300°C for 3 h. The seed layers are transparent, composed by textured ZnO with different grain sizes ranging from 30 to 90 nm which makes them promising to be applied as electrodeposition substrates. The obtained results demonstrate that their (photo)electrochemical properties, fundamental for the next deposition step, are strongly related to the sputtering conditions used. The results reveal that the largest photocurrent as well as the enhanced electrical conductivity was obtained for the films prepared at lowest sputtering power, 120W. While, the seed layer prepared at 300Wshows the lowest charge carrier density and high resistance to the photodissolution process.
UR - http://www.scopus.com/inward/record.url?scp=84978091643&partnerID=8YFLogxK
U2 - 10.1149/2.0741608jes
DO - 10.1149/2.0741608jes
M3 - Article
AN - SCOPUS:84978091643
SN - 0013-4651
VL - 163
SP - H697-H704
JO - Journal Of The Electrochemical Society
JF - Journal Of The Electrochemical Society
IS - 8
ER -