Zinc Oxynitride Films Prepared by Pulsed Laser Deposition

Rachid Ayouchi, L. Soares de Melo, S. R. Bhattacharyya, N. Bundaleski, O. Teodoro, L. Santos, R. Schwarz

Research output: Contribution to journalArticle

Abstract

We have studied the optimal deposition conditions for the production of low-oxygen-content Zinc nitride films (ZnON) by Pulsed Laser Deposition (PLD). In particular, substrate temperature has been varied between 100 and 500 °C. The film properties, particularly its morphology, showed a strong dependence on substrate temperature. Substrate temperatures beyond 350 °C led to highly crystalline and smooth films with a band gap of 3.32 eV and with resistivities ranging from 10-2 to 100 Ωcm. Film quality and surface oxygen content changed rapidly with exposure to air as evidenced by XPS analysis.
Original languageEnglish
Pages (from-to)303-309
Number of pages7
JournalProcedia Technology
Volume17
DOIs
Publication statusPublished - 1 Jan 2014

Keywords

  • Oxynitride thin films
  • ZnON
  • Wide band gap semiconductor
  • Pulsed laser deposition (PLD)

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    Ayouchi, R., Melo, L. S. D., Bhattacharyya, S. R., Bundaleski, N., Teodoro, O., Santos, L., & Schwarz, R. (2014). Zinc Oxynitride Films Prepared by Pulsed Laser Deposition. Procedia Technology, 17, 303-309. https://doi.org/10.1016/j.protcy.2014.10.241