We have studied the optimal deposition conditions for the production of low-oxygen-content Zinc nitride films (ZnON) by Pulsed Laser Deposition (PLD). In particular, substrate temperature has been varied between 100 and 500 °C. The film properties, particularly its morphology, showed a strong dependence on substrate temperature. Substrate temperatures beyond 350 °C led to highly crystalline and smooth films with a band gap of 3.32 eV and with resistivities ranging from 10-2 to 100 Ωcm. Film quality and surface oxygen content changed rapidly with exposure to air as evidenced by XPS analysis.
- Oxynitride thin films
- Wide band gap semiconductor
- Pulsed laser deposition (PLD)