We have studied the optimal deposition conditions for the production of low-oxygen-content Zinc nitride films (ZnON) by Pulsed Laser Deposition (PLD). In particular, substrate temperature has been varied between 100 and 500 °C. The film properties, particularly its morphology, showed a strong dependence on substrate temperature. Substrate temperatures beyond 350 °C led to highly crystalline and smooth films with a band gap of 3.32 eV and with resistivities ranging from 10-2 to 100 Ωcm. Film quality and surface oxygen content changed rapidly with exposure to air as evidenced by XPS analysis.
- Oxynitride thin films
- Wide band gap semiconductor
- Pulsed laser deposition (PLD)
Ayouchi, R., Melo, L. S. D., Bhattacharyya, S. R., Bundaleski, N., Teodoro, O., Santos, L., & Schwarz, R. (2014). Zinc Oxynitride Films Prepared by Pulsed Laser Deposition. Procedia Technology, 17, 303-309. https://doi.org/10.1016/j.protcy.2014.10.241