Zinc oxide thin films deposited by rf magnetron sputtering on mylar substrates at room temperature

Elvira Fortunato, Patrícia Nunes, António Marques, Daniel Costa, Hugo Águas, Isabel Ferreira, Maria E V Costa, Rodrigo Martins

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Aluminium doped zinc oxide thin films (ZnO:Al) have been deposited on polyester (Mylar type D, 100 μm thickness) substrates at room temperature by r.f. magnetron sputtering. The structural, morphological, optical and electrical properties of the deposited films have been studied. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface. The ZnO:Al thin films with 85% transmittance in the visible and infra-red region and a resistivity as low as 3.6×102 Ωcm have been obtained, as deposited. The obtained results are comparable to those ones obtained on glass substrates, opening a new field of low cost, light weight, small volume, flexible and unbreakable large area optoelectronic devices.

Original languageEnglish
Title of host publicationAdvanced Materials and Devices for Large-Area Electronics
Pages140-145
Number of pages6
Volume685
Publication statusPublished - 2001
Event2001 MRS Spring Meeting - San Francisco, CA, United States
Duration: 16 Apr 200120 Apr 2001

Conference

Conference2001 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period16/04/0120/04/01

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  • Cite this

    Fortunato, E., Nunes, P., Marques, A., Costa, D., Águas, H., Ferreira, I., ... Martins, R. (2001). Zinc oxide thin films deposited by rf magnetron sputtering on mylar substrates at room temperature. In Advanced Materials and Devices for Large-Area Electronics (Vol. 685, pp. 140-145)