Aluminium doped zinc oxide thin films (ZnO:Al) have been deposited on polyester (Mylar type D, 100 μm thickness) substrates at room temperature by r.f. magnetron sputtering. The structural, morphological, optical and electrical properties of the deposited films have been studied. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface. The ZnO:Al thin films with 85% transmittance in the visible and infra-red region and a resistivity as low as 3.6×102 Ωcm have been obtained, as deposited. The obtained results are comparable to those ones obtained on glass substrates, opening a new field of low cost, light weight, small volume, flexible and unbreakable large area optoelectronic devices.
|Title of host publication||Advanced Materials and Devices for Large-Area Electronics|
|Number of pages||6|
|Publication status||Published - 2001|
|Event||2001 MRS Spring Meeting - San Francisco, United States|
Duration: 16 Apr 2001 → 20 Apr 2001
|Conference||2001 MRS Spring Meeting|
|Period||16/04/01 → 20/04/01|