TY - GEN
T1 - Zinc oxide thin-film transistors
AU - Fortunato, Elvira Maria Correia
AU - Barquinha, Pedro Miguel Cândido
AU - Pimentel, Ana
AU - Gonçalves, Alexandra
AU - Marques, A.
AU - Pereira, Luis Miguel Nunes
AU - Martins, Rodrigo Ferrão de Paiva
PY - 2005/1/1
Y1 - 2005/1/1
N2 - ZnO thin film transistors (ZnO-TFT) have been fabricated by rf magnetron sputtering at room temperature with a bottom-gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 21 V, a field effect mobility of 20 cm2/Vs, a gate voltage swing of 1.24 V/decade and an on/off ratio of 2×105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high channel mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics. Moreover, the processing technology used to fabricate this device is relatively simple and it is compatible with inexpensive plastic/flexible substrate technology.
AB - ZnO thin film transistors (ZnO-TFT) have been fabricated by rf magnetron sputtering at room temperature with a bottom-gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 21 V, a field effect mobility of 20 cm2/Vs, a gate voltage swing of 1.24 V/decade and an on/off ratio of 2×105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high channel mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics. Moreover, the processing technology used to fabricate this device is relatively simple and it is compatible with inexpensive plastic/flexible substrate technology.
KW - optoelectronic devices
KW - transparent electronics
KW - thin-film transistors
KW - rf magnetron sputtering
KW - Thin-film transistors
KW - rf magnetron sputtering
KW - transparent electronics
KW - optoelectronic devices
U2 - 10.1007/1-4020-3475-X_20
DO - 10.1007/1-4020-3475-X_20
M3 - Conference contribution
VL - 194
SP - 225
EP - 238
BT - NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications
ER -