Zinc oxide thin-film transistors

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ZnO thin film transistors (ZnO-TFT) have been fabricated by rf magnetron sputtering at room temperature with a bottom-gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 21 V, a field effect mobility of 20 cm2/Vs, a gate voltage swing of 1.24 V/decade and an on/off ratio of 2×105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high channel mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics. Moreover, the processing technology used to fabricate this device is relatively simple and it is compatible with inexpensive plastic/flexible substrate technology.
Original languageEnglish
Title of host publicationNATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications
Pages225-238
Number of pages14
Volume194
DOIs
Publication statusPublished - 1 Jan 2005

Keywords

  • Thin-film transistors
  • rf magnetron sputtering
  • transparent electronics
  • optoelectronic devices

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    Fortunato, E. M. C., Barquinha, P. M. C., Pimentel, A., Gonçalves, A., Marques, A., Pereira, L. M. N., & Martins, R. F. D. P. (2005). Zinc oxide thin-film transistors. In NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications (Vol. 194, pp. 225-238) https://doi.org/10.1007/1-4020-3475-X_20