Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric

Elvira Maria Correia Fortunato; Pedro Miguel Cândido Barquinha; Rodrigo Ferrão de Paiva Martins

doi:10.1063/1.3514249

Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric

Elvira Maria Correia Fortunato, Pedro Miguel Cândido Barquinha, Rodrigo Ferrão de Paiva Martins

Research output: Contribution to journal › Article › peer-review

77 Citations (Scopus)

Abstract

The effects of zinc concentration on the performance of solution processed amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) have been investigated using high-k aluminum titanium oxide as gate dielectric. The x-ray diffraction results confirmed that all the IGZO channel layers are amorphous. The performance of a-IGZO TFTs were investigated in the linear regime operation. Highest linear field-effect mobility of 5.8 cm(2)/V s with an I(on)/I(off) ratio of 6 X 10(7) and subthreshold swing of 0.28 V/dec were obtained for the a-IGZO (311) TFTs. The obtained performance of the a-IGZO TFTs is very promising for low-voltage display applications.

Original language	Unknown
Pages (from-to)	nr. 183504
Journal	Applied Physics Letters
Volume	97
Issue number	18
DOIs	https://doi.org/10.1063/1.3514249
Publication status	Published - 1 Jan 2010

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10.1063/1.3514249

Cite this

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title = "Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric",

abstract = "The effects of zinc concentration on the performance of solution processed amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) have been investigated using high-k aluminum titanium oxide as gate dielectric. The x-ray diffraction results confirmed that all the IGZO channel layers are amorphous. The performance of a-IGZO TFTs were investigated in the linear regime operation. Highest linear field-effect mobility of 5.8 cm(2)/V s with an I(on)/I(off) ratio of 6 X 10(7) and subthreshold swing of 0.28 V/dec were obtained for the a-IGZO (311) TFTs. The obtained performance of the a-IGZO TFTs is very promising for low-voltage display applications.",

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Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric. / Fortunato, Elvira Maria Correia ; Barquinha, Pedro Miguel Cândido ; Martins, Rodrigo Ferrão de Paiva.
In: Applied Physics Letters, Vol. 97, No. 18, 01.01.2010, p. nr. 183504.

Research output: Contribution to journal › Article › peer-review

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AU - Fortunato, Elvira Maria Correia

AU - Barquinha, Pedro Miguel Cândido

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PY - 2010/1/1

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AB - The effects of zinc concentration on the performance of solution processed amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) have been investigated using high-k aluminum titanium oxide as gate dielectric. The x-ray diffraction results confirmed that all the IGZO channel layers are amorphous. The performance of a-IGZO TFTs were investigated in the linear regime operation. Highest linear field-effect mobility of 5.8 cm(2)/V s with an I(on)/I(off) ratio of 6 X 10(7) and subthreshold swing of 0.28 V/dec were obtained for the a-IGZO (311) TFTs. The obtained performance of the a-IGZO TFTs is very promising for low-voltage display applications.

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