Write-erase and read paper memory transistor

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Abstract

We report the architecture and the performances of a memory based on a single field-effect transistor built on paper able to write-erase and read. The device is composed of natural multilayer cellulose fibers that simultaneously act as structural support and gate dielectric; active and passive multicomponent amorphous oxides that work as the channel and gate electrode layers, respectively, complemented by the use of patterned metal layers as source/drain electrodes. The devices exhibit a large counterclockwise hysteresis associated with the memory effect, with a turn-on voltage shift between 1 and -14.5 V, on/off ratio and saturation mobilities of about 10(4) and 40 cm(2) V-1 s(-1), respectively, and estimated charge retention times above 14 000 h.
Original languageEnglish
Article number203501
JournalApplied Physics Letters
Volume93
Issue number20
DOIs
Publication statusPublished - 1 Jan 2008

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