Among all available processes, GaAs process has better speed footprint when compared to standard CMOS digital technology. The former presents charge carriers with greater mobility and saturation velocity, v sat , thus pushing the f T to more than 250 GHz . Considering comparable generations (technology nodes), CMOS has a lower f T , lower g m and lower driving capabilities. Nevertheless, CMOS has lower cost since it is fabricated from silicon and has a less demanding fabrication process requiring a minimum number of masks. Moreover, the mobility of the PMOS transistor is much higher when compared to an equivalent GaAs structure, which enables the implementation of efficient and complementary digital gates, thus reducing drastically static power consumption.
|Title of host publication||Parametric Analog Signal Amplification Applied to Nanoscale CMOS Technologies|
|Place of Publication||US|
|Publication status||Published - 1 Jan 2012|