Wide spectral response in μc-Si:H photodiodes

M. Vieira, S. Koynov, A. Fantoni, R. Schwarz

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Microcrystalline hydrogenated silicon based p-i-n photodiodes with an increased bias controlled IR sensitivity (above 800 nm) have been deposited successfully by a new cyclic chemical vapour deposition method. Details of preparation conditions, material characterization (structural, transport and optoelectronic properties), and device behaviour (response time, current-voltage and spectral photoresponse measurements) are reported. The results show that the microcrystalline device, compared with an amorphous device, presents a higher photocurrent with an increased collection efficiency in the red and near-IR due to an enhanced absorption.

Original languageEnglish
Pages (from-to)164-167
Number of pages4
JournalThin Solid Films
Volume296
Issue number1-2
DOIs
Publication statusPublished - 1 Jan 1997

Keywords

  • Hydrogenated silicon
  • Photodiodes
  • Spectral response

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