Microcrystalline hydrogenated silicon based p-i-n photodiodes with an increased bias controlled IR sensitivity (above 800 nm) have been deposited successfully by a new cyclic chemical vapour deposition method. Details of preparation conditions, material characterization (structural, transport and optoelectronic properties), and device behaviour (response time, current-voltage and spectral photoresponse measurements) are reported. The results show that the microcrystalline device, compared with an amorphous device, presents a higher photocurrent with an increased collection efficiency in the red and near-IR due to an enhanced absorption.
- Hydrogenated silicon
- Spectral response