Wide spectral response in μc-Si:H photodiodes

M. Vieira; S. Koynov; A. Fantoni; R. Schwarz

doi:10.1016/S0040-6090(96)09339-X

Wide spectral response in μc-Si:H photodiodes

M. Vieira, S. Koynov, A. Fantoni, R. Schwarz

UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Microcrystalline hydrogenated silicon based p-i-n photodiodes with an increased bias controlled IR sensitivity (above 800 nm) have been deposited successfully by a new cyclic chemical vapour deposition method. Details of preparation conditions, material characterization (structural, transport and optoelectronic properties), and device behaviour (response time, current-voltage and spectral photoresponse measurements) are reported. The results show that the microcrystalline device, compared with an amorphous device, presents a higher photocurrent with an increased collection efficiency in the red and near-IR due to an enhanced absorption.

Original language	English
Pages (from-to)	164-167
Number of pages	4
Journal	Thin Solid Films
Volume	296
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(96)09339-X
Publication status	Published - 1 Jan 1997

Keywords

Hydrogenated silicon
Photodiodes
Spectral response

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10.1016/S0040-6090(96)09339-XLicence: CC BY-NC-ND

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title = "Wide spectral response in μc-Si:H photodiodes",

abstract = "Microcrystalline hydrogenated silicon based p-i-n photodiodes with an increased bias controlled IR sensitivity (above 800 nm) have been deposited successfully by a new cyclic chemical vapour deposition method. Details of preparation conditions, material characterization (structural, transport and optoelectronic properties), and device behaviour (response time, current-voltage and spectral photoresponse measurements) are reported. The results show that the microcrystalline device, compared with an amorphous device, presents a higher photocurrent with an increased collection efficiency in the red and near-IR due to an enhanced absorption.",

keywords = "Hydrogenated silicon, Photodiodes, Spectral response",

author = "M. Vieira and S. Koynov and A. Fantoni and R. Schwarz",

note = "Financial support by EC network contract number DCHRX CT930394, PRAXIS XXI, NATO-POTHINFILM and Funda{\c c}{\~a}o Calouste Gulbenkian is gratefully acknowledged.",

year = "1997",

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doi = "10.1016/S0040-6090(96)09339-X",

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TY - JOUR

T1 - Wide spectral response in μc-Si:H photodiodes

AU - Vieira, M.

AU - Koynov, S.

AU - Fantoni, A.

AU - Schwarz, R.

N1 - Financial support by EC network contract number DCHRX CT930394, PRAXIS XXI, NATO-POTHINFILM and Fundação Calouste Gulbenkian is gratefully acknowledged.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Microcrystalline hydrogenated silicon based p-i-n photodiodes with an increased bias controlled IR sensitivity (above 800 nm) have been deposited successfully by a new cyclic chemical vapour deposition method. Details of preparation conditions, material characterization (structural, transport and optoelectronic properties), and device behaviour (response time, current-voltage and spectral photoresponse measurements) are reported. The results show that the microcrystalline device, compared with an amorphous device, presents a higher photocurrent with an increased collection efficiency in the red and near-IR due to an enhanced absorption.

AB - Microcrystalline hydrogenated silicon based p-i-n photodiodes with an increased bias controlled IR sensitivity (above 800 nm) have been deposited successfully by a new cyclic chemical vapour deposition method. Details of preparation conditions, material characterization (structural, transport and optoelectronic properties), and device behaviour (response time, current-voltage and spectral photoresponse measurements) are reported. The results show that the microcrystalline device, compared with an amorphous device, presents a higher photocurrent with an increased collection efficiency in the red and near-IR due to an enhanced absorption.

KW - Hydrogenated silicon

KW - Photodiodes

KW - Spectral response

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U2 - 10.1016/S0040-6090(96)09339-X

DO - 10.1016/S0040-6090(96)09339-X

M3 - Article

AN - SCOPUS:0031094713

SN - 0040-6090

VL - 296

SP - 164

EP - 167

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Wide spectral response in μc-Si:H photodiodes

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Keywords

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