Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

Elvira Maria Correia Fortunato; Pedro Miguel Cândido Barquinha; Ana Cláudia Madeira Botas Gomes Pimentel; Alexandra Gonçalves; António J. S. Marques; Rodrigo Ferrão de Paiva Martins; Luis Miguel Nunes Pereira

doi:10.1063/1.1790587

Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

Elvira Maria Correia Fortunato, Pedro Miguel Cândido Barquinha, Ana Cláudia Madeira Botas Gomes Pimentel, Alexandra Gonçalves, António J. S. Marques, Rodrigo Ferrão de Paiva Martins, Luis Miguel Nunes Pereira

DCM - Departamento de Ciência dos Materiais

Research output: Contribution to journal › Article › peer-review

577 Citations (Scopus)

Original language	English
Pages (from-to)	2541-2543
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	13
DOIs	https://doi.org/10.1063/1.1790587
Publication status	Published - 27 Sept 2004

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10.1063/1.1790587

Cite this

@article{0cbabbe2cc4a41ec8182f74ca32b2366,

title = "Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature",

author = "Fortunato, {Elvira Maria Correia} and Barquinha, {Pedro Miguel C{\^a}ndido} and Pimentel, {Ana Cl{\'a}udia Madeira Botas Gomes} and Alexandra Gon{\c c}alves and Marques, {Ant{\'o}nio J. S.} and Martins, {Rodrigo Ferr{\~a}o de Paiva} and Pereira, {Luis Miguel Nunes}",

year = "2004",

month = sep,

day = "27",

doi = "10.1063/1.1790587",

language = "English",

volume = "85",

pages = "2541--2543",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP - American Institute of Physics",

number = "13",

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T1 - Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

AU - Fortunato, Elvira Maria Correia

AU - Barquinha, Pedro Miguel Cândido

AU - Pimentel, Ana Cláudia Madeira Botas Gomes

AU - Gonçalves, Alexandra

AU - Marques, António J. S.

AU - Martins, Rodrigo Ferrão de Paiva

AU - Pereira, Luis Miguel Nunes

PY - 2004/9/27

Y1 - 2004/9/27

U2 - 10.1063/1.1790587

DO - 10.1063/1.1790587

M3 - Article

SN - 0003-6951

VL - 85

SP - 2541

EP - 2543

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -