Voltage Controlled Amorphous Si/SiC Phototransistors and Photodiodes as Wavelength Selective Devices: Theoretical and Electrical Approaches

In this paper single and stacked structures that can be used as wavelength selective devices, in the visible range, are analysed. Two terminal heterojunctions ranging from p-ií-n to p-i-n-p-i'-n configurations are studied. Three terminals double staked junctions with transparent contacts in-between are also considered to increase wavelength discrimination. The color discrimination was achieved by ac photocurrent measurement under different externally applied bias. Experimental data on spectral response analysis and current -voltage characteristics are reported. A theoretical analysis and an electrical simulation procedure are performed to support the wavelength selective behaviour. Good agreement between experimental and simulated data was achieved. Results show that in the single p-i-n configuration the device acts mainly as an optical switch while in the double ones, due to the self bias effect, the input channels are selectively tuned by shifting between positive and negative bias. If the internal terminal is used the inter-wavelength cross talk is reduced and the S/N increased.