Very high fluence nitrogen implantations in metals studied by Rutherford Backscattering Spectrometry

J. Cruz; H. Silva; J. Lopes; J. Rocha; A. P. Jesus

doi:10.1016/j.surfcoat.2018.01.042

Very high fluence nitrogen implantations in metals studied by Rutherford Backscattering Spectrometry

J. Cruz, H. Silva, J. Lopes, J. Rocha, A. P. Jesus

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

This paper reports a study of ¹⁴N⁺ implanted Ti and Zr films analysed by Rutherford Backscattering Spectrometry (RBS). The fluences ranged from 4.0-10.0 × 10¹⁷ atoms·cm^-2 and energies of 15-20 keV. Here, the nitrogen depth distributions were obtained simultaneously and independently for each RBS spectrum from the direct nitrogen signal and from the reduction of the backscattered yield from Ti and Zr (deficiency method). Fits to the RBS spectra show that the deficiency method clearly underestimates the ¹⁴N yield by 32% for Ti (and 45% for Zr) when compared to the direct nitrogen signal. This discrepancy reduces to 23% for Ti (and 43% for Zr) when the presence of nitrogen bubbles are simulated in the fits.

Original language	English
Pages (from-to)	169-173
Journal	Surface and Coatings Technology
Volume	355
DOIs	https://doi.org/10.1016/j.surfcoat.2018.01.042
Publication status	Published - 15 Dec 2018
Event	International Conference on Surface Modification of Materials by Ion Beams (SMMIB) - Lisbon, Portugal Duration: 9 Jul 2017 → 14 Jul 2017

Keywords

Deficiency method
Nitrogen implantation
RBS
Stopping power

Access to Document

10.1016/j.surfcoat.2018.01.042

Cite this

@article{efe0ebeb2ef94313add6e61302bd6efd,

title = "Very high fluence nitrogen implantations in metals studied by Rutherford Backscattering Spectrometry",

abstract = "This paper reports a study of 14N+ implanted Ti and Zr films analysed by Rutherford Backscattering Spectrometry (RBS). The fluences ranged from 4.0-10.0 × 1017 atoms·cm-2 and energies of 15-20 keV. Here, the nitrogen depth distributions were obtained simultaneously and independently for each RBS spectrum from the direct nitrogen signal and from the reduction of the backscattered yield from Ti and Zr (deficiency method). Fits to the RBS spectra show that the deficiency method clearly underestimates the 14N yield by 32% for Ti (and 45% for Zr) when compared to the direct nitrogen signal. This discrepancy reduces to 23% for Ti (and 43% for Zr) when the presence of nitrogen bubbles are simulated in the fits.",

keywords = "Deficiency method, Nitrogen implantation, RBS, Stopping power",

author = "J. Cruz and H. Silva and J. Lopes and J. Rocha and Jesus, {A. P.}",

year = "2018",

month = dec,

day = "15",

doi = "10.1016/j.surfcoat.2018.01.042",

language = "English",

volume = "355",

pages = "169--173",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier Science B.V., Amsterdam.",

note = "International Conference on Surface Modification of Materials by Ion Beams (SMMIB) ; Conference date: 09-07-2017 Through 14-07-2017",

}

TY - JOUR

T1 - Very high fluence nitrogen implantations in metals studied by Rutherford Backscattering Spectrometry

AU - Cruz, J.

AU - Silva, H.

AU - Lopes, J.

AU - Rocha, J.

AU - Jesus, A. P.

PY - 2018/12/15

Y1 - 2018/12/15

N2 - This paper reports a study of 14N+ implanted Ti and Zr films analysed by Rutherford Backscattering Spectrometry (RBS). The fluences ranged from 4.0-10.0 × 1017 atoms·cm-2 and energies of 15-20 keV. Here, the nitrogen depth distributions were obtained simultaneously and independently for each RBS spectrum from the direct nitrogen signal and from the reduction of the backscattered yield from Ti and Zr (deficiency method). Fits to the RBS spectra show that the deficiency method clearly underestimates the 14N yield by 32% for Ti (and 45% for Zr) when compared to the direct nitrogen signal. This discrepancy reduces to 23% for Ti (and 43% for Zr) when the presence of nitrogen bubbles are simulated in the fits.

AB - This paper reports a study of 14N+ implanted Ti and Zr films analysed by Rutherford Backscattering Spectrometry (RBS). The fluences ranged from 4.0-10.0 × 1017 atoms·cm-2 and energies of 15-20 keV. Here, the nitrogen depth distributions were obtained simultaneously and independently for each RBS spectrum from the direct nitrogen signal and from the reduction of the backscattered yield from Ti and Zr (deficiency method). Fits to the RBS spectra show that the deficiency method clearly underestimates the 14N yield by 32% for Ti (and 45% for Zr) when compared to the direct nitrogen signal. This discrepancy reduces to 23% for Ti (and 43% for Zr) when the presence of nitrogen bubbles are simulated in the fits.

KW - Deficiency method

KW - Nitrogen implantation

KW - RBS

KW - Stopping power

UR - http://www.scopus.com/inward/record.url?scp=85041556664&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2018.01.042

DO - 10.1016/j.surfcoat.2018.01.042

M3 - Conference article

AN - SCOPUS:85041556664

SN - 0257-8972

VL - 355

SP - 169

EP - 173

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

T2 - International Conference on Surface Modification of Materials by Ion Beams (SMMIB)

Y2 - 9 July 2017 through 14 July 2017

ER -

Very high fluence nitrogen implantations in metals studied by Rutherford Backscattering Spectrometry

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this