TY - JOUR
T1 - UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors
AU - Carlos, Emanuel
AU - Branquinho, Rita
AU - Kiazadeh, Asal
AU - Barquinha, Pedro
AU - Martins, Rodrigo
AU - Fortunato, Elvira
N1 - Sem PDF conforme despacho.
info:eu-repo/grantAgreement/EC/FP7/611070/EU#
This work is funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT, Portuguese Foundation for Science and Technology, under Project POCI-01-0145-FEDER-007688, Reference UID/CTM/50025, and Project EXCL/CTM-NAN/0201/2012, and European Community FP7 2007-2013 project i-FLEXIS Grant Agreement 611070. A.K. acknowledges FCT-MCTES for a postdoctoral grant (Grant SFRH/BPD/99136/2013). Authors acknowledge J. V. Pinto for XRD, D. Nunes for SEM-FIB, and T. Sequeira for AFM measurements.
PY - 2016/11/16
Y1 - 2016/11/16
N2 - Solution processing of amorphous metal oxides has lately been used as an option to implement in flexible electronics, allowing a reduction of the associated costs and high performance. However, the research has focused more on the semiconductor layer rather than on the insulator layer, which is related to the stability and performance of the devices. This work aims to evaluate amorphous aluminum oxide thin films produced by combustion synthesis and the influence of far-ultraviolet (FUV) irradiation on the properties of the insulator on thin-film transistors (TFTs) using different semiconductors, in order to have compatibility with flexible substrates. An optimized dielectric layer was obtained for an annealing of 30 min assisted by FUV exposure. These thin films were applied in gallium-indium-zinc oxide TFTs as dielectrics showing the best results for TFTs annealed at 180 °C with FUV irradiation: good reproducibility with a subthreshold slope of 0.11 ± 0.01 V dec -1 and a turn-on voltage of -0.12 ± 0.05 V, low operating voltage, and good stability over time. Finally, the dielectric layer was applied in solution-processed indium oxide (In2O3) TFTs at low temperature, 180 °C, with a short processing time being compatible with flexible electronic applications.
AB - Solution processing of amorphous metal oxides has lately been used as an option to implement in flexible electronics, allowing a reduction of the associated costs and high performance. However, the research has focused more on the semiconductor layer rather than on the insulator layer, which is related to the stability and performance of the devices. This work aims to evaluate amorphous aluminum oxide thin films produced by combustion synthesis and the influence of far-ultraviolet (FUV) irradiation on the properties of the insulator on thin-film transistors (TFTs) using different semiconductors, in order to have compatibility with flexible substrates. An optimized dielectric layer was obtained for an annealing of 30 min assisted by FUV exposure. These thin films were applied in gallium-indium-zinc oxide TFTs as dielectrics showing the best results for TFTs annealed at 180 °C with FUV irradiation: good reproducibility with a subthreshold slope of 0.11 ± 0.01 V dec -1 and a turn-on voltage of -0.12 ± 0.05 V, low operating voltage, and good stability over time. Finally, the dielectric layer was applied in solution-processed indium oxide (In2O3) TFTs at low temperature, 180 °C, with a short processing time being compatible with flexible electronic applications.
KW - aluminum oxide
KW - low operating voltage
KW - low temperature
KW - solution combustion synthesis of thin-film transistors
KW - UV irradiation
UR - http://www.scopus.com/inward/record.url?scp=84996964966&partnerID=8YFLogxK
U2 - 10.1021/acsami.6b06321
DO - 10.1021/acsami.6b06321
M3 - Article
C2 - 27762536
AN - SCOPUS:84996964966
SN - 1944-8244
VL - 8
SP - 31100
EP - 31108
JO - ACS Applied Materials & Interfaces
JF - ACS Applied Materials & Interfaces
IS - 45
ER -