UV enhanced and solar blind photodetectors based on large-band-gap materials

A. Malik, R. Martins

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

High quantum efficiency, UV-enhanced monocrystalline zinc sulphide optical sensors for precise radiometric and spectroscopic measurements have been developed by spray deposition of heavy fluorinedoped tin oxide thin films with carrier concentration near 1021 cm-3 onto the surface of zinc sulphide monocrystals as an alternative to the UV-enhanced silicon photodetectors as well as to new detectors based on SiC and GaN. The fabricated sensors have an unbiased internal quantum efficiency that was nearly 100% from 250 to 320 nm, and the typical sensitivity at 290 nm is 0.15 A/W. The sensors were insensitive to solar radiation in earth's conditions and can be used as solar blind photodetectors for precision UV-measurements under direct solar illumination, both terrestrial and space applications.

Original languageEnglish
Pages (from-to)1425-1430
Number of pages6
JournalMaterials Science Forum
Volume258-263
Issue number9993
DOIs
Publication statusPublished - 1997
Event19th International Conference on Defects in Semiconductors (ICDS-19) - Aveiro, Portugal
Duration: 21 Jul 199725 Jul 1997

Keywords

  • Fluorine doping
  • Heterojunctions
  • Tin oxide films
  • UV photodetectors
  • Zinc sulphide

Fingerprint Dive into the research topics of 'UV enhanced and solar blind photodetectors based on large-band-gap materials'. Together they form a unique fingerprint.

Cite this