Using reconciliation model for calculation of harmonics in a MOS transistor stage operating in moderate inversion

I. M. Filanovsky, L. B. Oliveira

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

The paper describes calculation of the first, second and third harmonics of the output voltage in a MOS transistor stage operating in moderate inversion (common source stage is taken as an example). The dependence of drain current on the gate-source voltage is approximated on the basis of reconciliation model proposed by Y. Tsividis and using the term corresponding to saturation operation. Then, the definition of moderate inversion is introduced considering a special series expansion for the function ln2(x). To simplify the calculations we consider the first two terms only for this expansion. Then the harmonic coefficients are obtained by routine calculations. The results of calculations were verified by simulations. The results are in a reasonable agreement; in particular, the presence of the zero value for the third harmonic is confirmed both in calculations and simulations.

Original languageEnglish
Pages474-477
Number of pages4
DOIs
Publication statusPublished - 2016
Event2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016 - Montreal, Canada
Duration: 22 May 201625 May 2016

Conference

Conference2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016
CountryCanada
CityMontreal
Period22/05/1625/05/16

Keywords

  • common source stage
  • distortions
  • moderate inversion
  • MOS transistor model
  • output voltage harmonics

Fingerprint Dive into the research topics of 'Using reconciliation model for calculation of harmonics in a MOS transistor stage operating in moderate inversion'. Together they form a unique fingerprint.

  • Cite this

    Filanovsky, I. M., & Oliveira, L. B. (2016). Using reconciliation model for calculation of harmonics in a MOS transistor stage operating in moderate inversion. 474-477. Paper presented at 2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016, Montreal, Canada. https://doi.org/10.1109/ISCAS.2016.7527280