Uniform arrays of ZnO 1D nanostructures grown on Al:ZnO seeds layers by hydrothermal method

A.-I. Danciu, V. Musat, T. Busani, J. V. Pinto, R. Barros, A. Maria Rego, A. Maria Ferraria, P. A. Carvalho, R. Martins, E. Fortunato

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6 Citations (Scopus)

Abstract

In obtaining uniform array of ZnO 1D nanostructures, especially using solution based methods, the thickness and the morphology of the epitaxial seeds layer are very important. The paper presents the effect of the thickness and the morphology of the Al:ZnO seeds layer on the morphology and properties of ZnO nanowires array grown by hydrothermal method. Compact and vertically aligned ZnO 1D nanostructures were obtained. Concentration of 0.02 M of zinc nitrate was found to be optimal for growing nanowires with diameters up to 50 nm and lengths between 1.5 and 2.5 microns. Using 0.04 M solution, nanorods with diameter between 50 and 100 nm were obtained. The correlation between the crystal structure and optical properties of ZnO nanowires is discussed. From electrical measurements on single nanowire, resistivity value of 9×10−2Ω cm was obtained. TheI–Vcurves of single ZnO NWs show quasi diode characteristic when ane-beam is irradiating the NWs, and a typical semiconductive behaviour when thee-beam is turned off.
Original languageEnglish
Pages (from-to)6701-6710
Number of pages10
JournalJournal Of Nanoscience And Nanotechnology
Volume13
Issue number10
DOIs
Publication statusPublished - Oct 2013

Keywords

  • Band Gap Energy
  • Crystalline Structure
  • Electrical Properties
  • Semiconducting II-VI Materials
  • Single Crystal
  • ZnO Nanowires

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