TY - GEN
T1 - Unified Physical Parameters-Based Analytical Drain Current Model of Amorphous-InGaZnO TFTs for Emerging Display Technology
AU - Sharma, Ashima
AU - Bahubalindruni, Pydi Ganga
AU - Bharti, Manisha
AU - Barquinha, Pedro
N1 - Funding Information:
Acknowledgements This work is supported by SERB power fellowship with project ref. SPF/2021/000018.
Publisher Copyright:
© The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2023.
PY - 2023
Y1 - 2023
N2 - In this work, a simple, precise, physical parameters-based model of Amorphous-InGaZnO thin-film transistor is proposed by employing dominant attributes of the device in the specific operating region. The model precisely replicates the measured current–voltage characteristics of any long channel length TFT. In addition, the scope of the model is augmented to replicate the electrical behavior of short channel length TFTs by employing a basic approach that requires a few least-square empirical parameters. For a fixed short channel length TFT, an average error between model outcome and measured device response is found to be less than 3%. The unified model is incorporated in cadence simulator to simulate a 15-stage ring oscillator with long and short channel length TFTs. The simulation response is well accorded with expected device behavior, which further emphasizes the use of the proposed unified model to design oxide TFT-based circuits for a wide application range.
AB - In this work, a simple, precise, physical parameters-based model of Amorphous-InGaZnO thin-film transistor is proposed by employing dominant attributes of the device in the specific operating region. The model precisely replicates the measured current–voltage characteristics of any long channel length TFT. In addition, the scope of the model is augmented to replicate the electrical behavior of short channel length TFTs by employing a basic approach that requires a few least-square empirical parameters. For a fixed short channel length TFT, an average error between model outcome and measured device response is found to be less than 3%. The unified model is incorporated in cadence simulator to simulate a 15-stage ring oscillator with long and short channel length TFTs. The simulation response is well accorded with expected device behavior, which further emphasizes the use of the proposed unified model to design oxide TFT-based circuits for a wide application range.
KW - Flexible electronics
KW - Optimization
KW - Ring oscillator
KW - Short channel device
KW - Thin-film transistors (TFTs)
KW - Unified modeling
UR - http://www.scopus.com/inward/record.url?scp=85152858877&partnerID=8YFLogxK
U2 - 10.1007/978-981-19-7982-8_45
DO - 10.1007/978-981-19-7982-8_45
M3 - Conference contribution
AN - SCOPUS:85152858877
SN - 978-981-19-7981-1
T3 - Lecture Notes in Networks and Systems
SP - 535
EP - 542
BT - Mobile Radio Communications and 5G Networks
A2 - Marriwala, Nikhil
A2 - Tripathi, C. C.
A2 - Jain, Shruti
A2 - Kumar, Dinesh
PB - Springer
CY - Singapore
T2 - 3rd International Conference on Mobile Radio Communications and 5G Networks, MRCN 2022
Y2 - 10 June 2022 through 12 June 2022
ER -