TY - JOUR
T1 - Ultra-flexible, high-performing NAN transparent electrodes for bendable optoelectronic applications
AU - Akalin, Salih Alper
AU - Mateus, Tiago
AU - Ribeiro, Guilherme
AU - Deuermeier, Jonas
AU - Calmeiro, Tomás
AU - Águas, Hugo
AU - Martins, Rodrigo
AU - Vicente, António T.
AU - Mendes, Manuel J.
AU - Yilmazer Menda, Ugur Deneb
N1 - Funding Information:
info:eu-repo/grantAgreement/FCT/Concurso para Atribuição do Estatuto e Financiamento de Laboratórios Associados (LA)/LA%2FP%2F0037%2F2020/PT#
info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDP%2F50025%2F2020/PT#
info:eu-repo/grantAgreement/FCT/Concurso de avaliação no âmbito do Programa Plurianual de Financiamento de Unidades de I&D (2017%2F2018) - Financiamento Base/UIDB%2F50025%2F2020/PT#
info:eu-repo/grantAgreement/FCT/3599-PPCDT/2022.02954.PTDC/PT#
info:eu-repo/grantAgreement/FCT/3599-PPCDT/PTDC%2FCTM-REF%2F1008%2F2020/PT#
info:eu-repo/grantAgreement/FCT/3599-PPCDT/2022.01610.PTDC/PT#
The authors are indebted to the infrastructural support from CENIMAT where the research was carried out. S.A. Akalin acknowledges funding for a post-doc scholarship from TÜBİTAK (Scientific and Technological Research Council of Türkiye) through grant 1059B192200308.
Publisher Copyright:
© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024.
PY - 2024/9
Y1 - 2024/9
N2 - The NiO/Ag/NiO (NAN) structure, a member of the oxide/metal/oxide (OMO) structures, was developed as an alternative to conventional transparent electrodes. The fabrication process employed combination of RF-magnetron sputter and e-beam evaporation techniques, and to optimize the electrode performance, the Ag layer thickness within the NAN structures was varied between 4 and 20 nm. The resulting configurations were evaluated through the Fraser-Cook and Haacke figures of merit (FoM). The optimized structure exhibited high optical transmittance of 75% and a low sheet resistance (RS) of ∼5 Ω/□. Compared to a commercial sample of indium tin oxide (ITO) coated polyethylene terephthalate (PET), the NAN/PET structures show higher Fraser-Cook FoM, closely aligned with the Haacke FoM, owing to their lower RS values. In addition, the flexural resistance of the electrodes was assessed by subjecting the samples to 10,000 bending cycles. Following this test, the RS value of ITO/PET increased 26.3 times to 3312.89 Ω/□, while the NAN/PET only increased 1.25 times to 7.82 Ω/□. Even the least performing NAN sample, deposited on polyethylene naphthalate (NAN/PEN), experienced a moderate increase in resistance, stabilizing at 59.93 Ω/□. The obtained results highlight the great potential of the NAN structure as an electrode for flexible optoelectronic devices.
AB - The NiO/Ag/NiO (NAN) structure, a member of the oxide/metal/oxide (OMO) structures, was developed as an alternative to conventional transparent electrodes. The fabrication process employed combination of RF-magnetron sputter and e-beam evaporation techniques, and to optimize the electrode performance, the Ag layer thickness within the NAN structures was varied between 4 and 20 nm. The resulting configurations were evaluated through the Fraser-Cook and Haacke figures of merit (FoM). The optimized structure exhibited high optical transmittance of 75% and a low sheet resistance (RS) of ∼5 Ω/□. Compared to a commercial sample of indium tin oxide (ITO) coated polyethylene terephthalate (PET), the NAN/PET structures show higher Fraser-Cook FoM, closely aligned with the Haacke FoM, owing to their lower RS values. In addition, the flexural resistance of the electrodes was assessed by subjecting the samples to 10,000 bending cycles. Following this test, the RS value of ITO/PET increased 26.3 times to 3312.89 Ω/□, while the NAN/PET only increased 1.25 times to 7.82 Ω/□. Even the least performing NAN sample, deposited on polyethylene naphthalate (NAN/PEN), experienced a moderate increase in resistance, stabilizing at 59.93 Ω/□. The obtained results highlight the great potential of the NAN structure as an electrode for flexible optoelectronic devices.
UR - http://www.scopus.com/inward/record.url?scp=85203271747&partnerID=8YFLogxK
U2 - 10.1007/s10854-024-13442-2
DO - 10.1007/s10854-024-13442-2
M3 - Article
AN - SCOPUS:85203271747
SN - 0957-4522
VL - 35
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 25
M1 - 1687
ER -