Tunneling in vertical μcSi/aSixCyOz: H/μcSi heterostructures

E. Fortunato, R. Martins, I. Ferreira, M. Santos, A. Maçarico, L. Guimarães

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

In this paper we report by the first time tunneling tranport on vertical μcSi/aSixCyOz:H/μcSi (μcaμc) heterostructures produced in a Two consecutive Decomposition and Deposition Chamber system where a Negative Differential Conductance is observed even at room temperature. Giant bias anomalies are observed, that decrease with temperature. Tunneling spectroscopy data are also reported for samples measured at low temperatures. A qualitative information of the recorded data is obtained and related with main features of the heterostructure. Nevertheless in this stage is hard to take quantitative information.

Original languageEnglish
Pages (from-to)120-122
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume115
Issue number1-3
DOIs
Publication statusPublished - 3 Dec 1989

Fingerprint Dive into the research topics of 'Tunneling in vertical μcSi/aSixCyOz: H/μcSi heterostructures'. Together they form a unique fingerprint.

Cite this