Tunnel FET device characteristics for RF energy harvesting passive rectifiers

David Cavalheiro, Francesc Moll, Stanimir Valtchev

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The lack of high power conversion efficiency in RF passive rectifier circuits at sub-μW power levels with current MOSFET technologies is directly related with the difficulty of the transistors in conducting the required level of current at low voltage values. With a different carrier injection mechanism, the superior electrical characteristics of the Tunnel FET devices at low voltage values (sub-0.25 V) can outperform the process of energy conversion at ultra-low power, thus improving the operation range of RF energy harvesting circuits. In this work, a simulation study on the doping profile and material selection of Tunnel FET devices shows the impact of device properties in rectifier circuit efficiency.

Original languageEnglish
Title of host publicationConference Proceedings - 13th IEEE International NEW Circuits and Systems Conference, NEWCAS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)978-1-4799-8893-8
DOIs
Publication statusPublished - 6 Aug 2015
Event13th IEEE International NEW Circuits and Systems Conference, NEWCAS 2015 - Grenoble, France
Duration: 7 Jun 201510 Jun 2015

Conference

Conference13th IEEE International NEW Circuits and Systems Conference, NEWCAS 2015
CountryFrance
CityGrenoble
Period7/06/1510/06/15

Keywords

  • Doping
  • Energy Harvesting
  • Radio-Frequency
  • Rectifier
  • Tunnel FET
  • Ultra-Low Power

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