Abstract
The lack of high power conversion efficiency in RF passive rectifier circuits at sub-μW power levels with current MOSFET technologies is directly related with the difficulty of the transistors in conducting the required level of current at low voltage values. With a different carrier injection mechanism, the superior electrical characteristics of the Tunnel FET devices at low voltage values (sub-0.25 V) can outperform the process of energy conversion at ultra-low power, thus improving the operation range of RF energy harvesting circuits. In this work, a simulation study on the doping profile and material selection of Tunnel FET devices shows the impact of device properties in rectifier circuit efficiency.
Original language | English |
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Title of host publication | Conference Proceedings - 13th IEEE International NEW Circuits and Systems Conference, NEWCAS 2015 |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
ISBN (Electronic) | 978-1-4799-8893-8 |
DOIs | |
Publication status | Published - 6 Aug 2015 |
Event | 13th IEEE International NEW Circuits and Systems Conference, NEWCAS 2015 - Grenoble, France Duration: 7 Jun 2015 → 10 Jun 2015 |
Conference
Conference | 13th IEEE International NEW Circuits and Systems Conference, NEWCAS 2015 |
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Country/Territory | France |
City | Grenoble |
Period | 7/06/15 → 10/06/15 |
Keywords
- Doping
- Energy Harvesting
- Radio-Frequency
- Rectifier
- Tunnel FET
- Ultra-Low Power