Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques

Rodrigo Martins; Manuela Vieira; Isabel Ferreira; Elvira Fortunato; Leopoldo Guimarães

doi:10.1016/0927-0248(95)00096-8

Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques

Rodrigo Martins, Manuela Vieira, Isabel Ferreira, Elvira Fortunato, Leopoldo Guimarães

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

This paper presents results of the role of the oxygen partial pressure used during the deposition process on the transport properties exhibited by doped microcrystalline silicon oxycarbide films produced by a Two Consecutive Decomposition and Deposition Chamber system, where a spatial separation between the plasma and the growth regions is achieved. This paper also presents the interpretative models of the optoelectronic behaviour observed in these films (highly conductive and transparent with suitable properties for optoelectronic applications) as well as the interpretation of the growth process that leads to film's microcrystallization.

Original language	English
Pages (from-to)	493-517
Number of pages	25
Journal	Solar Energy Materials and Solar Cells
Volume	41-42
DOIs	https://doi.org/10.1016/0927-0248(95)00096-8
Publication status	Published - 1 Jan 1996

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abstract = "This paper presents results of the role of the oxygen partial pressure used during the deposition process on the transport properties exhibited by doped microcrystalline silicon oxycarbide films produced by a Two Consecutive Decomposition and Deposition Chamber system, where a spatial separation between the plasma and the growth regions is achieved. This paper also presents the interpretative models of the optoelectronic behaviour observed in these films (highly conductive and transparent with suitable properties for optoelectronic applications) as well as the interpretation of the growth process that leads to film's microcrystallization.",

author = "Rodrigo Martins and Manuela Vieira and Isabel Ferreira and Elvira Fortunato and Leopoldo Guimar{\~a}es",

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T1 - Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques

AU - Martins, Rodrigo

AU - Vieira, Manuela

AU - Ferreira, Isabel

AU - Fortunato, Elvira

AU - Guimarães, Leopoldo

PY - 1996/1/1

Y1 - 1996/1/1

N2 - This paper presents results of the role of the oxygen partial pressure used during the deposition process on the transport properties exhibited by doped microcrystalline silicon oxycarbide films produced by a Two Consecutive Decomposition and Deposition Chamber system, where a spatial separation between the plasma and the growth regions is achieved. This paper also presents the interpretative models of the optoelectronic behaviour observed in these films (highly conductive and transparent with suitable properties for optoelectronic applications) as well as the interpretation of the growth process that leads to film's microcrystallization.

AB - This paper presents results of the role of the oxygen partial pressure used during the deposition process on the transport properties exhibited by doped microcrystalline silicon oxycarbide films produced by a Two Consecutive Decomposition and Deposition Chamber system, where a spatial separation between the plasma and the growth regions is achieved. This paper also presents the interpretative models of the optoelectronic behaviour observed in these films (highly conductive and transparent with suitable properties for optoelectronic applications) as well as the interpretation of the growth process that leads to film's microcrystallization.

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U2 - 10.1016/0927-0248(95)00096-8

DO - 10.1016/0927-0248(95)00096-8

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AN - SCOPUS:0030173265

SN - 0927-0248

VL - 41-42

SP - 493

EP - 517

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques

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