Abstract
This paper presents results of the role of the oxygen partial pressure (pO2) used on the properties exhibited by doped μc silicon oxycarbide films produced by a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system [1], where a spatial separation between the plasma and the growth regions is achieved. The films produced are highly conductive and transparent with suitable properties for optoelectronic applications.
Original language | English |
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Pages (from-to) | 508-511 |
Number of pages | 4 |
Journal | Proceedings Of The Ieee |
Volume | 1 |
Publication status | Published - 1994 |
Event | 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion/24th IEEE Photovoltaic Specialists Conference - Waikoloa, United States Duration: 5 Dec 1994 → 9 Dec 1994 |