Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques

Research output: Contribution to journalConference article

Abstract

This paper presents results of the role of the oxygen partial pressure (pO2) used on the properties exhibited by doped μc silicon oxycarbide films produced by a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system [1], where a spatial separation between the plasma and the growth regions is achieved. The films produced are highly conductive and transparent with suitable properties for optoelectronic applications.

Original languageEnglish
Pages (from-to)508-511
Number of pages4
JournalProceedings Of The Ieee
Volume1
Publication statusPublished - 1994
Event1994 IEEE 1st World Conference on Photovoltaic Energy Conversion/24th IEEE Photovoltaic Specialists Conference - Waikoloa, United States
Duration: 5 Dec 19949 Dec 1994

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