Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques

Rodrigo Martins; Manuela Vieira; Isabel Ferreira; Elvira Fortunato; L. Guimarães

Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques

Rodrigo Martins, Manuela Vieira, Isabel Ferreira, Elvira Fortunato, L. Guimarães

Research output: Contribution to journal › Conference article

Abstract

This paper presents results of the role of the oxygen partial pressure (p_O2) used on the properties exhibited by doped μc silicon oxycarbide films produced by a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system [1], where a spatial separation between the plasma and the growth regions is achieved. The films produced are highly conductive and transparent with suitable properties for optoelectronic applications.

Original language	English
Pages (from-to)	508-511
Number of pages	4
Journal	Proceedings Of The Ieee
Volume	1
Publication status	Published - 1994
Event	1994 IEEE 1st World Conference on Photovoltaic Energy Conversion/24th IEEE Photovoltaic Specialists Conference - Waikoloa, United States Duration: 5 Dec 1994 → 9 Dec 1994

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Martins, R., Vieira, M., Ferreira, I., Fortunato, E., & Guimarães, L. (1994). Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques. Proceedings Of The Ieee, 1, 508-511.

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abstract = "This paper presents results of the role of the oxygen partial pressure (pO2) used on the properties exhibited by doped μc silicon oxycarbide films produced by a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system [1], where a spatial separation between the plasma and the growth regions is achieved. The films produced are highly conductive and transparent with suitable properties for optoelectronic applications.",

author = "Rodrigo Martins and Manuela Vieira and Isabel Ferreira and Elvira Fortunato and L. Guimar{\~a}es",

year = "1994",

language = "English",

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publisher = "IEEE Institute of Electrical and Electronics",

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AU - Martins, Rodrigo

AU - Vieira, Manuela

AU - Ferreira, Isabel

AU - Fortunato, Elvira

AU - Guimarães, L.

PY - 1994

Y1 - 1994

N2 - This paper presents results of the role of the oxygen partial pressure (pO2) used on the properties exhibited by doped μc silicon oxycarbide films produced by a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system [1], where a spatial separation between the plasma and the growth regions is achieved. The films produced are highly conductive and transparent with suitable properties for optoelectronic applications.

AB - This paper presents results of the role of the oxygen partial pressure (pO2) used on the properties exhibited by doped μc silicon oxycarbide films produced by a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system [1], where a spatial separation between the plasma and the growth regions is achieved. The films produced are highly conductive and transparent with suitable properties for optoelectronic applications.

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M3 - Conference article

AN - SCOPUS:0028724235

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EP - 511

JO - Proceedings Of The Ieee

JF - Proceedings Of The Ieee

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