Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques

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Abstract

This paper presents results of the role of the oxygen partial pressure (pO2) used on the properties exhibited by doped μc silicon oxycarbide films produced by a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system [1], where a spatial separation between the plasma and the growth regions is achieved. The films produced are highly conductive and transparent with suitable properties for optoelectronic applications.

Original languageEnglish
Pages (from-to)508-511
Number of pages4
JournalProceedings Of The Ieee
Volume1
Publication statusPublished - 1994
Event1994 IEEE 1st World Conference on Photovoltaic Energy Conversion/24th IEEE Photovoltaic Specialists Conference - Waikoloa, United States
Duration: 5 Dec 19949 Dec 1994

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