Transport in high mobility amorphous wide band gap indium zinc oxide films

Research output: Contribution to journalArticle

97 Citations (Scopus)

Abstract

This paper discusses the electron transport in the n-type amorphous indium–zinc–oxygen system produced at room temperature by rf magnetron sputtering, under different oxygen partial pressures. The data show that the transport is not band tail limited, as it happens in conventional disordered semiconductors, but highly dependent on its ionicity, which explains the very high mobilities (≥60 cm2 V–1 s–1) achieved. The room temperature dependence of the Hall mobility on the carrier concentration presents a reverse behaviour than the one observed in conventional crystalline/polycrystalline semi-conductors, explained mainly by the presence of charged structural defects in excess of 4 × 1010 cm–2 that scatter the electrons that pass through them.
Original languageEnglish
Pages (from-to)R95-R97
Number of pages3
JournalPhysica Status Solidi A-Applications And Materials Science
Volume202
Issue number9
DOIs
Publication statusPublished - Jul 2005

Fingerprint

Zinc Oxide
Indium
Zinc oxide
zinc oxides
indium oxides
Oxide films
oxide films
Energy gap
broadband
Hall mobility
room temperature
Partial pressure
Magnetron sputtering
Carrier concentration
partial pressure
magnetron sputtering
electrons
conductors
Semiconductor materials
Oxygen

Cite this

@article{8c99bedb73464bc79b754f1fa82a12b0,
title = "Transport in high mobility amorphous wide band gap indium zinc oxide films",
abstract = "This paper discusses the electron transport in the n-type amorphous indium–zinc–oxygen system produced at room temperature by rf magnetron sputtering, under different oxygen partial pressures. The data show that the transport is not band tail limited, as it happens in conventional disordered semiconductors, but highly dependent on its ionicity, which explains the very high mobilities (≥60 cm2 V–1 s–1) achieved. The room temperature dependence of the Hall mobility on the carrier concentration presents a reverse behaviour than the one observed in conventional crystalline/polycrystalline semi-conductors, explained mainly by the presence of charged structural defects in excess of 4 × 1010 cm–2 that scatter the electrons that pass through them.",
author = "Martins, {Rodrigo Ferr{\~a}o de Paiva} and Barquinha, {Pedro Miguel C{\^a}ndido} and Pimentel, {Ana Cl{\'a}udia Madeira Botas Gomes} and Pereira, {Luis Miguel Nunes} and Fortunato, {Elvira Maria Correia}",
year = "2005",
month = "7",
doi = "10.1002/pssa.200521020",
language = "English",
volume = "202",
pages = "R95--R97",
journal = "Physica Status Solidi A-Applications And Materials Science",
issn = "0031-8965",
publisher = "John Wiley & Sons, Ltd / Academic Verlag GMBH",
number = "9",

}

TY - JOUR

T1 - Transport in high mobility amorphous wide band gap indium zinc oxide films

AU - Martins, Rodrigo Ferrão de Paiva

AU - Barquinha, Pedro Miguel Cândido

AU - Pimentel, Ana Cláudia Madeira Botas Gomes

AU - Pereira, Luis Miguel Nunes

AU - Fortunato, Elvira Maria Correia

PY - 2005/7

Y1 - 2005/7

N2 - This paper discusses the electron transport in the n-type amorphous indium–zinc–oxygen system produced at room temperature by rf magnetron sputtering, under different oxygen partial pressures. The data show that the transport is not band tail limited, as it happens in conventional disordered semiconductors, but highly dependent on its ionicity, which explains the very high mobilities (≥60 cm2 V–1 s–1) achieved. The room temperature dependence of the Hall mobility on the carrier concentration presents a reverse behaviour than the one observed in conventional crystalline/polycrystalline semi-conductors, explained mainly by the presence of charged structural defects in excess of 4 × 1010 cm–2 that scatter the electrons that pass through them.

AB - This paper discusses the electron transport in the n-type amorphous indium–zinc–oxygen system produced at room temperature by rf magnetron sputtering, under different oxygen partial pressures. The data show that the transport is not band tail limited, as it happens in conventional disordered semiconductors, but highly dependent on its ionicity, which explains the very high mobilities (≥60 cm2 V–1 s–1) achieved. The room temperature dependence of the Hall mobility on the carrier concentration presents a reverse behaviour than the one observed in conventional crystalline/polycrystalline semi-conductors, explained mainly by the presence of charged structural defects in excess of 4 × 1010 cm–2 that scatter the electrons that pass through them.

U2 - 10.1002/pssa.200521020

DO - 10.1002/pssa.200521020

M3 - Article

VL - 202

SP - R95-R97

JO - Physica Status Solidi A-Applications And Materials Science

JF - Physica Status Solidi A-Applications And Materials Science

SN - 0031-8965

IS - 9

ER -