Transport in μc-Six: Cy:Oz:H films prepared by a TCDDC system

R. Martins, G. Willeke, E. Fortunato, I. Ferreira, M. Vieira, M. Santos, A. Maçarico, L. Guimarães

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

N- and p-type weakly absorbing and highly conductive microcrystalline thin μc-Six:Cy:Oz:H films, have been produced by a TCDDC (Two Consecutive Decomposition and Deposition Chamber) system1. The optoelectronic and structural results show that we are in the presence of a mixed phase of Si microcrystals (c-islands) embedded in a-Six:Cy:Oz:H (a-tissue). Based on that, we propose a model where transport mechanisms are explained by the potential fluctuations related to films heterogeneities. Thus, conduction is due to carriers that by tunneling or percolation "pass" or "go" trough the barriers and/or percolate randomly by the formed channels.

Original languageEnglish
Pages (from-to)486-488
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 2
DOIs
Publication statusPublished - 2 Dec 1989

Keywords

  • Semiconducting Silicon Compounds

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