Transport in μc-Six: Cy:Oz:H films prepared by a TCDDC system

R. Martins, G. Willeke, E. Fortunato, I. Ferreira, M. Vieira, M. Santos, A. Maçarico, L. Guimarães

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12 Citations (Scopus)


N- and p-type weakly absorbing and highly conductive microcrystalline thin μc-Six:Cy:Oz:H films, have been produced by a TCDDC (Two Consecutive Decomposition and Deposition Chamber) system1. The optoelectronic and structural results show that we are in the presence of a mixed phase of Si microcrystals (c-islands) embedded in a-Six:Cy:Oz:H (a-tissue). Based on that, we propose a model where transport mechanisms are explained by the potential fluctuations related to films heterogeneities. Thus, conduction is due to carriers that by tunneling or percolation "pass" or "go" trough the barriers and/or percolate randomly by the formed channels.

Original languageEnglish
Pages (from-to)486-488
Number of pages3
JournalJournal of Non-Crystalline Solids
Issue numberPART 2
Publication statusPublished - 2 Dec 1989


  • Semiconducting Silicon Compounds


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