TY - JOUR
T1 - Transport in μc-Six
T2 - Cy:Oz:H films prepared by a TCDDC system
AU - Martins, R.
AU - Willeke, G.
AU - Fortunato, E.
AU - Ferreira, I.
AU - Vieira, M.
AU - Santos, M.
AU - Maçarico, A.
AU - Guimarães, L.
N1 - Sem PDF.
PY - 1989/12/2
Y1 - 1989/12/2
N2 - N- and p-type weakly absorbing and highly conductive microcrystalline thin μc-Six:Cy:Oz:H films, have been produced by a TCDDC (Two Consecutive Decomposition and Deposition Chamber) system1. The optoelectronic and structural results show that we are in the presence of a mixed phase of Si microcrystals (c-islands) embedded in a-Six:Cy:Oz:H (a-tissue). Based on that, we propose a model where transport mechanisms are explained by the potential fluctuations related to films heterogeneities. Thus, conduction is due to carriers that by tunneling or percolation "pass" or "go" trough the barriers and/or percolate randomly by the formed channels.
AB - N- and p-type weakly absorbing and highly conductive microcrystalline thin μc-Six:Cy:Oz:H films, have been produced by a TCDDC (Two Consecutive Decomposition and Deposition Chamber) system1. The optoelectronic and structural results show that we are in the presence of a mixed phase of Si microcrystals (c-islands) embedded in a-Six:Cy:Oz:H (a-tissue). Based on that, we propose a model where transport mechanisms are explained by the potential fluctuations related to films heterogeneities. Thus, conduction is due to carriers that by tunneling or percolation "pass" or "go" trough the barriers and/or percolate randomly by the formed channels.
KW - Semiconducting Silicon Compounds
UR - http://www.scopus.com/inward/record.url?scp=0024837634&partnerID=8YFLogxK
U2 - 10.1016/0022-3093(89)90625-X
DO - 10.1016/0022-3093(89)90625-X
M3 - Article
AN - SCOPUS:0024837634
SN - 0022-3093
VL - 114
SP - 486
EP - 488
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - PART 2
ER -