Indium oxide films were deposited by radio-frequency plasma enhanced reactive thermal evaporation (rf-PERTE). The combined use of rf power and oxygen pressure allowed the control of the crystallite size in the film, changing the optical and electrical properties. The films obtained have electrical resistivity ranging from 13.7 to 1.7 x 10(7) Omega cm. Transparent TFTs made with those films as semiconducting and conducting layers, respectively, present threshold voltages near 2 V and on/off ratios of 10(4).
- Thin film transistors
- gallium zinc