Transparent thin film transistors based on indium oxide semiconductor

G. Lavareda Lavareda, N. Carvalho, Elvira Maria Correia Fortunato, Ariel Rita L. Ramos, Eduardo Alves, Olinda Conde, Ana Amaral

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

Indium oxide films were deposited by radio-frequency plasma enhanced reactive thermal evaporation (rf-PERTE). The combined use of rf power and oxygen pressure allowed the control of the crystallite size in the film, changing the optical and electrical properties. The films obtained have electrical resistivity ranging from 13.7 to 1.7 x 10(7) Omega cm. Transparent TFTs made with those films as semiconducting and conducting layers, respectively, present threshold voltages near 2 V and on/off ratios of 10(4).
Original languageEnglish
Pages (from-to)2311-2314
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume352
Issue number23-25
DOIs
Publication statusPublished - 15 Jul 2006

Keywords

  • Thin film transistors
  • gallium zinc
  • gallium

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