TY - JOUR
T1 - Transparent thin film transistors based on indium oxide semiconductor
AU - Lavareda, G. Lavareda
AU - Carvalho, N.
AU - Fortunato, Elvira Maria Correia
AU - Ramos, Ariel Rita L.
AU - Alves, Eduardo
AU - Conde, Olinda
AU - Amaral, Ana
PY - 2006/7/15
Y1 - 2006/7/15
N2 - Indium oxide films were deposited by radio-frequency plasma enhanced reactive thermal evaporation (rf-PERTE). The combined use of rf power and oxygen pressure allowed the control of the crystallite size in the film, changing the optical and electrical properties. The films obtained have electrical resistivity ranging from 13.7 to 1.7 x 10(7) Omega cm. Transparent TFTs made with those films as semiconducting and conducting layers, respectively, present threshold voltages near 2 V and on/off ratios of 10(4).
AB - Indium oxide films were deposited by radio-frequency plasma enhanced reactive thermal evaporation (rf-PERTE). The combined use of rf power and oxygen pressure allowed the control of the crystallite size in the film, changing the optical and electrical properties. The films obtained have electrical resistivity ranging from 13.7 to 1.7 x 10(7) Omega cm. Transparent TFTs made with those films as semiconducting and conducting layers, respectively, present threshold voltages near 2 V and on/off ratios of 10(4).
KW - transistors
KW - film
KW - thin
KW - Thin film transistors
KW - gallium zinc
KW - gallium
U2 - 10.1016/j.jnoncrysol.2006.03.031
DO - 10.1016/j.jnoncrysol.2006.03.031
M3 - Article
SN - 0022-3093
VL - 352
SP - 2311
EP - 2314
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - 23-25
ER -