Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

C. Besleaga, G. E. Stan, I. Pintilie, P. Barquinha, E. Fortunato, R. Martins

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The degradation of thin-film transistors (TFTs) caused by the self-heating effect constitutes a problem to be solved for the next generation of displays. Aluminum nitride (AlN) is a viable alternative for gate dielectric of TFTs due to its good thermal conductivity, matching coefficient of thermal expansion to indium-gallium-zinc-oxide, and excellent stability at high temperatures. Here, AlN thin films of different thicknesses were fabricated by a low temperature reactive radio-frequency magnetron sputtering process, using a low cost, metallic Al target. Their electrical properties have been thoroughly assessed. Furthermore, the 200 nm and 500 nm thick AlN layers have been integrated as gate-dielectric in transparent TFTs with indium-gallium-zinc-oxide as channel semiconductor. Our study emphasizes the potential of AlN thin films for transparent electronics, whilst the functionality of the fabricated field-effect transistors is explored and discussed.

Original languageEnglish
Pages (from-to)270-276
Number of pages7
JournalApplied Surface Science
Volume379
DOIs
Publication statusPublished - 30 Aug 2016

Keywords

  • Aluminum nitride
  • Field-effect transistors
  • Indium-gallium-zinc-oxide
  • Transparent electronics

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