Abstract
We have studied the low-temperature processing of ZnO by chemical solution deposition. A transparent, stable precursor solution prepared from zinc acetate dihydrate dissolved in 2-methoxyethanol was spin-coated on SiOx/Si, soda-lime glass and polymer substrates and heated at 150 degrees C. Selected thin films deposited on SiOx/Si were additionally heated at 450 degrees C.
Microstructural and chemical analyses showed that the thin films heated at 150 degrees C in air were amorphous, contained no organic residues and had a root mean square roughness of 0.7 nm. The films deposited on SiOx/Si and heated at 450 degrees C were crystallised and consisted of randomly oriented grains with a diameter of about 20 nm. All thin films were transparent, exhibiting a transmission of over 80% in the visible range. The resistivity of the 120-nm thick ZnO films processed at 150 degrees C was 57 M Omega cm and upon heating at 450 degrees C it decreased to 1.9 k Omega cm. (c)
Microstructural and chemical analyses showed that the thin films heated at 150 degrees C in air were amorphous, contained no organic residues and had a root mean square roughness of 0.7 nm. The films deposited on SiOx/Si and heated at 450 degrees C were crystallised and consisted of randomly oriented grains with a diameter of about 20 nm. All thin films were transparent, exhibiting a transmission of over 80% in the visible range. The resistivity of the 120-nm thick ZnO films processed at 150 degrees C was 57 M Omega cm and upon heating at 450 degrees C it decreased to 1.9 k Omega cm. (c)
| Original language | English |
|---|---|
| Pages (from-to) | 5134-5139 |
| Number of pages | 6 |
| Journal | Thin Solid Films |
| Volume | 518 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 1 Jul 2010 |
Keywords
- Zinc oxide
- Chemical solution deposition
- Amorphous materials
- Resistivity
- Thin film transistor
- Transparent electronics
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