This paper proposed simple and accurate threshold voltage (VTH) extraction techniques, which can be directly adaptable to various semiconductor technologies ranging from deep sub-micron complementary metal-oxide-semiconductor to large-area thin-film transistor devices. These techniques are developed using multiple circuits, namely, a dynamic source follower, an inverter with a diode-connected load and a current mirror topology, which allow a direct determination of VTH. As the proposed techniques are experimented with large-area emerging technologies, which have a stable single type (n-type) transistor, all the designs employed in this work are confined to only n-type transistors for a fair comparison. The semiconductor technologies under consideration are standard complementary metal-oxide-semiconductor (65 and 130 nm) and oxide (indium-gallium-zinc-oxide and zinc-tin-oxide) thin-film transistors. In order to validate the accuracy of the proposed techniques, extracted VTH from these methods are compared against the value from linear transfer characteristics. The resulting relative error is within 5%, reinforcing proposed techniques suitability to different semiconductor technologies ranging from deep sub-micron to large-area transistors.
|Journal||International Journal of Circuit Theory and Applications|
|Publication status||Accepted/In press - 1 Jan 2017|
- Dynamic source follower
- Large-area electronics
- Oxide TFTs
- Sub-micron designs
- Threshold voltage extraction techniques