Abstract

This paper proposed simple and accurate threshold voltage (VTH) extraction techniques, which can be directly adaptable to various semiconductor technologies ranging from deep sub-micron complementary metal-oxide-semiconductor to large-area thin-film transistor devices. These techniques are developed using multiple circuits, namely, a dynamic source follower, an inverter with a diode-connected load and a current mirror topology, which allow a direct determination of VTH. As the proposed techniques are experimented with large-area emerging technologies, which have a stable single type (n-type) transistor, all the designs employed in this work are confined to only n-type transistors for a fair comparison. The semiconductor technologies under consideration are standard complementary metal-oxide-semiconductor (65 and 130 nm) and oxide (indium-gallium-zinc-oxide and zinc-tin-oxide) thin-film transistors. In order to validate the accuracy of the proposed techniques, extracted VTH from these methods are compared against the value from linear transfer characteristics. The resulting relative error is within 5%, reinforcing proposed techniques suitability to different semiconductor technologies ranging from deep sub-micron to large-area transistors.

Original languageEnglish
JournalInternational Journal of Circuit Theory and Applications
DOIs
Publication statusAccepted/In press - 1 Jan 2017

Fingerprint

Threshold voltage
Oxides
Semiconductors
Voltage
Transistors
Thin-film Transistor
Thin film transistors
Semiconductor materials
Zinc oxide
Metals
Zinc Oxide
Gallium
Tin oxides
Indium
Oxide films
Inverter
Zinc
Relative Error
Diodes
Mirrors

Keywords

  • Dynamic source follower
  • Large-area electronics
  • Oxide TFTs
  • Sub-micron designs
  • Threshold voltage extraction techniques

Cite this

@article{30c8b6465f9143a7afcb382e4843ebde,
title = "Threshold voltage extraction techniques adaptable from sub-micron CMOS to large-area oxide TFT technologies",
abstract = "This paper proposed simple and accurate threshold voltage (VTH) extraction techniques, which can be directly adaptable to various semiconductor technologies ranging from deep sub-micron complementary metal-oxide-semiconductor to large-area thin-film transistor devices. These techniques are developed using multiple circuits, namely, a dynamic source follower, an inverter with a diode-connected load and a current mirror topology, which allow a direct determination of VTH. As the proposed techniques are experimented with large-area emerging technologies, which have a stable single type (n-type) transistor, all the designs employed in this work are confined to only n-type transistors for a fair comparison. The semiconductor technologies under consideration are standard complementary metal-oxide-semiconductor (65 and 130 nm) and oxide (indium-gallium-zinc-oxide and zinc-tin-oxide) thin-film transistors. In order to validate the accuracy of the proposed techniques, extracted VTH from these methods are compared against the value from linear transfer characteristics. The resulting relative error is within 5{\%}, reinforcing proposed techniques suitability to different semiconductor technologies ranging from deep sub-micron to large-area transistors.",
keywords = "Dynamic source follower, Large-area electronics, Oxide TFTs, Sub-micron designs, Threshold voltage extraction techniques",
author = "Smrutilekha Samanta and Bhawna Tiwari and Bahubalindruni, {Pydi Ganga} and Pedro Barquinha and Joao Goes",
note = "sem pdf conforme despacho. Portuguese Foundation for Science and Technology (FCT) under Strategic Project, PEST - UID/EEA/00066/2013",
year = "2017",
month = "1",
day = "1",
doi = "10.1002/cta.2340",
language = "English",
journal = "International Journal of Circuit Theory and Applications",
issn = "0098-9886",
publisher = "John Wiley & Sons, Ltd",

}

TY - JOUR

T1 - Threshold voltage extraction techniques adaptable from sub-micron CMOS to large-area oxide TFT technologies

AU - Samanta, Smrutilekha

AU - Tiwari, Bhawna

AU - Bahubalindruni, Pydi Ganga

AU - Barquinha, Pedro

AU - Goes, Joao

N1 - sem pdf conforme despacho. Portuguese Foundation for Science and Technology (FCT) under Strategic Project, PEST - UID/EEA/00066/2013

PY - 2017/1/1

Y1 - 2017/1/1

N2 - This paper proposed simple and accurate threshold voltage (VTH) extraction techniques, which can be directly adaptable to various semiconductor technologies ranging from deep sub-micron complementary metal-oxide-semiconductor to large-area thin-film transistor devices. These techniques are developed using multiple circuits, namely, a dynamic source follower, an inverter with a diode-connected load and a current mirror topology, which allow a direct determination of VTH. As the proposed techniques are experimented with large-area emerging technologies, which have a stable single type (n-type) transistor, all the designs employed in this work are confined to only n-type transistors for a fair comparison. The semiconductor technologies under consideration are standard complementary metal-oxide-semiconductor (65 and 130 nm) and oxide (indium-gallium-zinc-oxide and zinc-tin-oxide) thin-film transistors. In order to validate the accuracy of the proposed techniques, extracted VTH from these methods are compared against the value from linear transfer characteristics. The resulting relative error is within 5%, reinforcing proposed techniques suitability to different semiconductor technologies ranging from deep sub-micron to large-area transistors.

AB - This paper proposed simple and accurate threshold voltage (VTH) extraction techniques, which can be directly adaptable to various semiconductor technologies ranging from deep sub-micron complementary metal-oxide-semiconductor to large-area thin-film transistor devices. These techniques are developed using multiple circuits, namely, a dynamic source follower, an inverter with a diode-connected load and a current mirror topology, which allow a direct determination of VTH. As the proposed techniques are experimented with large-area emerging technologies, which have a stable single type (n-type) transistor, all the designs employed in this work are confined to only n-type transistors for a fair comparison. The semiconductor technologies under consideration are standard complementary metal-oxide-semiconductor (65 and 130 nm) and oxide (indium-gallium-zinc-oxide and zinc-tin-oxide) thin-film transistors. In order to validate the accuracy of the proposed techniques, extracted VTH from these methods are compared against the value from linear transfer characteristics. The resulting relative error is within 5%, reinforcing proposed techniques suitability to different semiconductor technologies ranging from deep sub-micron to large-area transistors.

KW - Dynamic source follower

KW - Large-area electronics

KW - Oxide TFTs

KW - Sub-micron designs

KW - Threshold voltage extraction techniques

UR - http://www.scopus.com/inward/record.url?scp=85017370067&partnerID=8YFLogxK

U2 - 10.1002/cta.2340

DO - 10.1002/cta.2340

M3 - Article

JO - International Journal of Circuit Theory and Applications

JF - International Journal of Circuit Theory and Applications

SN - 0098-9886

ER -