@article{355dcf68412d48d0bb01123bc4b53836,
title = "Thin-film transistors based on p-type Cu2O thin films produced at room temperature",
abstract = "Copper oxide (Cu2 O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2 O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm2 /V s and an on/off ratio of 2× 102.",
keywords = "Bottom gate , Electrical performance , Field-effect mobilities , On/off ratio , P-type , Polycrystalline structure , rf-Magnetron sputtering , Room temperature, Electrodeposition, Copper oxides, Cuprous oxide",
author = "Fortunato, {Elvira Maria Correia} and Vitor Figueiredo and Barquinha, {Pedro Miguel C{\^a}ndido} and Elangovan Elamurugu and Raquel Barros and Gon{\c c}alo Gon{\c c}alves and Park, {Sang Hee Ko} and Martins, {Rodrigo Ferr{\~a}o de Paiva} and Chisun Hwang",
note = "This work was funded by the Portuguese Science Foundation (FCT-MCTES) through projects PTDC/CTM/73943/2006, PTDC/EEA-ELC/64975/2006, ERC 2008 Advanced Grant (INVISIBLE Contract No. 228144) and IT R&D program of MKE (Contract No. 2006-S079-03, Smart window with transparent electronic devices) from ETRI Korea. We thank K. Nomura for the Seebeck measurements and N. Franco for the XRD analysis.",
year = "2010",
doi = "10.1063/1.3428434",
language = "English",
volume = "96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AIP - American Institute of Physics",
number = "19",
}