Abstract

Copper oxide (Cu2 O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2 O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm2 /V s and an on/off ratio of 2× 102.
Original languageEnglish
Article number192102
JournalApplied Physics Letters
Volume96
Issue number19
DOIs
Publication statusPublished - 2010

Keywords

  • Bottom gate
  • Electrical performance
  • Field-effect mobilities
  • On/off ratio
  • P-type
  • Polycrystalline structure
  • rf-Magnetron sputtering
  • Room temperature
  • Electrodeposition
  • Copper oxides
  • Cuprous oxide

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