Thin-Film Transistors Based on Indium Molybdenum Oxide Semiconductor Layers Sputtered at Room Temperature

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Abstract

Thin-film transistors (TFTs) were fabricated using a 20-nm-thick indium molybdenum oxide (IMO) semiconductor layer at room temperature. The grazing incidence x-ray diffraction patterns confirmed that the deposited films are amorphous. The average transmittance (400-2500 nm) and the optical band gap are ~ 88% and 3.95 eV, respectively. The TFTs fabricated on glass substrates showed a saturation mobility of 4.0 cm2/V·s with anION/IOFFratio of 2 × 103and a threshold voltage of -1.1 V, which are encouraging preliminary results in order to develop IMO as high-performance semiconductor layer.
Original languageUnknown
Pages (from-to)1391-1393
JournalIeee Electron Device Letters
Volume32
Issue number10
DOIs
Publication statusPublished - 1 Jan 2011

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