TY - JOUR
T1 - Thin-Film Transistors Based on Indium Molybdenum Oxide Semiconductor Layers Sputtered at Room Temperature
AU - Barquinha, Pedro Miguel Cândido
AU - Martins, Rodrigo Ferrão de Paiva
AU - Fortunato, Elvira Maria Correia
PY - 2011/1/1
Y1 - 2011/1/1
N2 - Thin-film transistors (TFTs) were fabricated using a 20-nm-thick indium molybdenum oxide (IMO) semiconductor layer at room temperature. The grazing incidence x-ray diffraction patterns confirmed that the deposited films are amorphous. The average transmittance (400-2500 nm) and the optical band gap are ~ 88% and 3.95 eV, respectively. The TFTs fabricated on glass substrates showed a saturation mobility of 4.0 cm2/V·s with anION/IOFFratio of 2 × 103and a threshold voltage of -1.1 V, which are encouraging preliminary results in order to develop IMO as high-performance semiconductor layer.
AB - Thin-film transistors (TFTs) were fabricated using a 20-nm-thick indium molybdenum oxide (IMO) semiconductor layer at room temperature. The grazing incidence x-ray diffraction patterns confirmed that the deposited films are amorphous. The average transmittance (400-2500 nm) and the optical band gap are ~ 88% and 3.95 eV, respectively. The TFTs fabricated on glass substrates showed a saturation mobility of 4.0 cm2/V·s with anION/IOFFratio of 2 × 103and a threshold voltage of -1.1 V, which are encouraging preliminary results in order to develop IMO as high-performance semiconductor layer.
KW - Amorphous oxide semiconductors
KW - x-ray diffraction (XRD)
KW - radio-frequency (RF) sputtering
KW - thin-film transistors (TFTs)
U2 - 10.1109/LED.2011.2162310
DO - 10.1109/LED.2011.2162310
M3 - Article
SN - 0741-3106
VL - 32
SP - 1391
EP - 1393
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 10
ER -