Abstract
Provided is a thin film transistor that includes a substrate on which an insulating layer is formed, a gate formed on a region of the insulating layer, a gate insulating layer formed on the insulating layer and the gate, a channel region formed on the gate insulating layer on a region corresponding to the location of the gate, a source and a drain respectively formed by contacting either side of the channel region; and a passivation layer formed of a compound made of a group II element and a halogen element on the channel region.
| Original language | English |
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| Patent number | US2008277663A1 |
| IPC | H01L29/7869 |
| Priority date | 8/05/08 |
| Publication status | Published - 12 Nov 2008 |