Thin Film Transistor and Method of Manufacturing the Same

D. Kang (Inventor), I. Song (Inventor), Rodrigo Ferrão de Paiva Martins (Inventor), Elvira Maria Correia Fortunato (Inventor)

Research output: PatentInternational PCT application


Provided is a thin film transistor that includes a substrate on which an insulating layer is formed, a gate formed on a region of the insulating layer, a gate insulating layer formed on the insulating layer and the gate, a channel region formed on the gate insulating layer on a region corresponding to the location of the gate, a source and a drain respectively formed by contacting either side of the channel region; and a passivation layer formed of a compound made of a group II element and a halogen element on the channel region.
Original languageEnglish
Patent numberUS2008277663A1
Priority date8/05/08
Publication statusPublished - 12 Nov 2008


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