Thin film position sensitive detectors based on pin amorphous silicon carbide structures

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Abstract

The performances of silicon carbide position sensitive detectors in relation to position color selection applications were presented. The devices were deposited on glass substrates coated with a transparent conductive oxide layer based on indium tin oxide film (ITO). On top of the ITP layer a pin structure produced by plasma enhanced chemical vapor deposition technique was deposited. The set of data achieved indicated that the undoped silicon carbide layers presented a low density of states, which explained high dark conductivity values obtained and the type of performances recorded on the PSD devices produced.

Original languageEnglish
Pages (from-to)443-447
Number of pages5
JournalApplied Surface Science
Volume184
Issue number1-4
DOIs
Publication statusPublished - 12 Dec 2001

Keywords

  • Pin structure
  • Position sensitive detectors
  • Silicon carbide alloys

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