Thin film position sensitive detectors based on pin amorphous silicon carbide structures

The performances of silicon carbide position sensitive detectors in relation to position color selection applications were presented. The devices were deposited on glass substrates coated with a transparent conductive oxide layer based on indium tin oxide film (ITO). On top of the ITP layer a pin structure produced by plasma enhanced chemical vapor deposition technique was deposited. The set of data achieved indicated that the undoped silicon carbide layers presented a low density of states, which explained high dark conductivity values obtained and the type of performances recorded on the PSD devices produced.