Thin film position sensitive detector based on amorphous silicon p-i-n diode

Elvira Fortunato; Guilherme Lavareda; Manuela Vieira; Rodrigo Martins

doi:10.1063/1.1144507

Thin film position sensitive detector based on amorphous silicon p-i-n diode

Elvira Fortunato, Guilherme Lavareda, Manuela Vieira, Rodrigo Martins

DCM - Departamento de Ciência dos Materiais

Research output: Contribution to journal › Article

45 Citations (Scopus)

Abstract

The application of hydrogenated amorphous silicon (a-Si:H) to optoelectronic devices are now well established as a viable low cost technology and is presently receiving much interest. Taking advantage of the properties of a-Si:H based devices, single and dual axis large area (up to 80×80 mm ²) thin film position sensitive detectors (TFPSD) based on a-Si:H p-i-n diodes have been developed, produced by plasma enhanced chemical vapor deposition. In this study, the main optoelectronic properties presented by the TFPSD as well as their behavior under operation conditions, concerning its linearity and signal to noise ratio, are reported.

Original language	English
Pages (from-to)	3784-3786
Number of pages	3
Journal	Review of Scientific Instruments
Volume	65
Issue number	12
DOIs	https://doi.org/10.1063/1.1144507
Publication status	Published - 1994

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@article{029d64b647794ef9b9abf9ecb0609a54,

title = "Thin film position sensitive detector based on amorphous silicon p-i-n diode",

abstract = "The application of hydrogenated amorphous silicon (a-Si:H) to optoelectronic devices are now well established as a viable low cost technology and is presently receiving much interest. Taking advantage of the properties of a-Si:H based devices, single and dual axis large area (up to 80×80 mm 2) thin film position sensitive detectors (TFPSD) based on a-Si:H p-i-n diodes have been developed, produced by plasma enhanced chemical vapor deposition. In this study, the main optoelectronic properties presented by the TFPSD as well as their behavior under operation conditions, concerning its linearity and signal to noise ratio, are reported.",

author = "Elvira Fortunato and Guilherme Lavareda and Manuela Vieira and Rodrigo Martins",

year = "1994",

doi = "10.1063/1.1144507",

language = "English",

volume = "65",

pages = "3784--3786",

journal = "Review of Scientific Instruments",

issn = "0034-6748",

publisher = "AMER INST PHYSICS",

number = "12",

}

TY - JOUR

T1 - Thin film position sensitive detector based on amorphous silicon p-i-n diode

AU - Fortunato, Elvira

AU - Lavareda, Guilherme

AU - Vieira, Manuela

AU - Martins, Rodrigo

PY - 1994

Y1 - 1994

N2 - The application of hydrogenated amorphous silicon (a-Si:H) to optoelectronic devices are now well established as a viable low cost technology and is presently receiving much interest. Taking advantage of the properties of a-Si:H based devices, single and dual axis large area (up to 80×80 mm 2) thin film position sensitive detectors (TFPSD) based on a-Si:H p-i-n diodes have been developed, produced by plasma enhanced chemical vapor deposition. In this study, the main optoelectronic properties presented by the TFPSD as well as their behavior under operation conditions, concerning its linearity and signal to noise ratio, are reported.

AB - The application of hydrogenated amorphous silicon (a-Si:H) to optoelectronic devices are now well established as a viable low cost technology and is presently receiving much interest. Taking advantage of the properties of a-Si:H based devices, single and dual axis large area (up to 80×80 mm 2) thin film position sensitive detectors (TFPSD) based on a-Si:H p-i-n diodes have been developed, produced by plasma enhanced chemical vapor deposition. In this study, the main optoelectronic properties presented by the TFPSD as well as their behavior under operation conditions, concerning its linearity and signal to noise ratio, are reported.

UR - http://www.scopus.com/inward/record.url?scp=0001457335&partnerID=8YFLogxK

U2 - 10.1063/1.1144507

DO - 10.1063/1.1144507

M3 - Article

AN - SCOPUS:0001457335

VL - 65

SP - 3784

EP - 3786

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

SN - 0034-6748

IS - 12

ER -