Abstract
Highly textured transparent conducting ZnO:Al thin films have been prepared by r.f. magnetron sputtering. The films were deposited on polyester (Mylar type D, 100 μm thickness) and glass substrates at room temperature. Surface stylus profiling, X-ray diffraction, scanning electron microscopy, transmission electron microscope and Hall effect measurements as a function of temperature have been used to characterize the produced films. The samples are polycrystalline with a hexagonal wurtzke structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface (columnar structure). The ZnO:Al thin films with a resistivity as low 3.6×10-2 Ωcm have been obtained, as deposited.
Original language | English |
---|---|
Pages (from-to) | F1131-F1136 |
Number of pages | 6 |
Journal | Materials Research Society Symposium Proceedings |
Volume | 666 |
Publication status | Published - 1 Jan 2001 |
Keywords
- X ray diffraction analysis
- Crystal orientation
- Crystallography
- Electric conductivity
- Hall effect
- Magnetron sputtering
- Scanning electron microscopy
- Sputter deposition
- Semiconducting zinc compounds
- Substrates