Thin film metal oxide semiconductors deposited on polymeric substrates

Elvira Fortunato, Patrícia J. Nunes, António Marques, Daniel Costa, Hugo Águas, Isabel Ferreira, Maria E.V. Costa, Rodrigo Martins

Research output: Contribution to journalArticle

Abstract

Highly textured transparent conducting ZnO:Al thin films have been prepared by r.f. magnetron sputtering. The films were deposited on polyester (Mylar type D, 100 μm thickness) and glass substrates at room temperature. Surface stylus profiling, X-ray diffraction, scanning electron microscopy, transmission electron microscope and Hall effect measurements as a function of temperature have been used to characterize the produced films. The samples are polycrystalline with a hexagonal wurtzke structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface (columnar structure). The ZnO:Al thin films with a resistivity as low 3.6×10-2 Ωcm have been obtained, as deposited.

Original languageEnglish
Pages (from-to)F1131-F1136
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume666
Publication statusPublished - 1 Jan 2001

Keywords

  • X ray diffraction analysis
  • Crystal orientation
  • Crystallography
  • Electric conductivity
  • Hall effect
  • Magnetron sputtering
  • Scanning electron microscopy
  • Sputter deposition
  • Semiconducting zinc compounds
  • Substrates

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