Abstract
Highly textured transparent conducting ZnO:Al thin films have been prepared by r.f. magnetron sputtering. The films were deposited on polyester (Mylar type D, 100 μm thickness) and glass substrates at room temperature. Surface stylus profiling, X-ray diffraction, scanning electron microscopy, transmission electron microscope and Hall effect measurements as a function of temperature, using the van der Pauw technique have characterized the films. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface (columnar structure). The ZnO:Al thin films with a resistivity as low as 3.6×10-2 Ωcm have been obtained, as deposited.
Original language | English |
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Title of host publication | Advanced Materials and Devices for Large-Area Electronics |
Pages | 146-151 |
Number of pages | 6 |
Volume | 685 |
Publication status | Published - 2001 |
Event | 2001 MRS Spring Meeting - San Francisco, United States Duration: 16 Apr 2001 → 20 Apr 2001 |
Conference
Conference | 2001 MRS Spring Meeting |
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Country/Territory | United States |
City | San Francisco |
Period | 16/04/01 → 20/04/01 |