Thin film metal oxide semiconductors deposited on polymeric substrates

Elvira Fortunato, Patrícia Nunes, António Marques, Daniel Costa, Hugo Águas, Isabel Ferreira, Maria E V Costa, Rodrigo Martins

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Highly textured transparent conducting ZnO:Al thin films have been prepared by r.f. magnetron sputtering. The films were deposited on polyester (Mylar type D, 100 μm thickness) and glass substrates at room temperature. Surface stylus profiling, X-ray diffraction, scanning electron microscopy, transmission electron microscope and Hall effect measurements as a function of temperature, using the van der Pauw technique have characterized the films. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface (columnar structure). The ZnO:Al thin films with a resistivity as low as 3.6×10-2 Ωcm have been obtained, as deposited.

Original languageEnglish
Title of host publicationAdvanced Materials and Devices for Large-Area Electronics
Pages146-151
Number of pages6
Volume685
Publication statusPublished - 2001
Event2001 MRS Spring Meeting - San Francisco, CA, United States
Duration: 16 Apr 200120 Apr 2001

Conference

Conference2001 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period16/04/0120/04/01

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  • Cite this

    Fortunato, E., Nunes, P., Marques, A., Costa, D., Águas, H., Ferreira, I., ... Martins, R. (2001). Thin film metal oxide semiconductors deposited on polymeric substrates. In Advanced Materials and Devices for Large-Area Electronics (Vol. 685, pp. 146-151)