Thin film metal oxide semiconductors deposited on polymeric substrates

Elvira Fortunato, Patrícia Nunes, António Marques, Daniel Costa, Hugo Águas, Isabel Ferreira, Maria E V Costa, Rodrigo Martins

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Highly textured transparent conducting ZnO:Al thin films have been prepared by r.f. magnetron sputtering. The films were deposited on polyester (Mylar type D, 100 μm thickness) and glass substrates at room temperature. Surface stylus profiling, X-ray diffraction, scanning electron microscopy, transmission electron microscope and Hall effect measurements as a function of temperature, using the van der Pauw technique have characterized the films. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface (columnar structure). The ZnO:Al thin films with a resistivity as low as 3.6×10-2 Ωcm have been obtained, as deposited.

Original languageEnglish
Title of host publicationAdvanced Materials and Devices for Large-Area Electronics
Pages146-151
Number of pages6
Volume685
Publication statusPublished - 2001
Event2001 MRS Spring Meeting - San Francisco, United States
Duration: 16 Apr 200120 Apr 2001

Conference

Conference2001 MRS Spring Meeting
CountryUnited States
CitySan Francisco
Period16/04/0120/04/01

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