Highly textured transparent conducting ZnO:Al thin films have been prepared by r.f. magnetron sputtering. The films were deposited on polyester (Mylar type D, 100 μm thickness) and glass substrates at room temperature. Surface stylus profiling, X-ray diffraction, scanning electron microscopy, transmission electron microscope and Hall effect measurements as a function of temperature, using the van der Pauw technique have characterized the films. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface (columnar structure). The ZnO:Al thin films with a resistivity as low as 3.6×10-2 Ωcm have been obtained, as deposited.
|Title of host publication||Advanced Materials and Devices for Large-Area Electronics|
|Number of pages||6|
|Publication status||Published - 2001|
|Event||2001 MRS Spring Meeting - San Francisco, United States|
Duration: 16 Apr 2001 → 20 Apr 2001
|Conference||2001 MRS Spring Meeting|
|Period||16/04/01 → 20/04/01|