Thermoelectric properties of V2O5 thin films deposited by thermal evaporation

R. Santos; J. Loureiro; A. Nogueira; Elamurugu Elangovan; J. V. Pinto; J. P. Veiga; T. Busani; E. Fortunato; R. Martins; I. Ferreira

doi:10.1016/j.apsusc.2013.06.016

Thermoelectric properties of V2O5 thin films deposited by thermal evaporation

R. Santos, J. Loureiro, A. Nogueira, Elamurugu Elangovan, J. V. Pinto, J. P. Veiga, T. Busani, E. Fortunato, R. Martins, I. Ferreira

Research output: Contribution to journal › Article › peer-review

83 Citations (Scopus)

Abstract

a b s t r a c t This work reports the structural, optical, electrical and thermoelectric properties of vanadium pentoxide (V2O5) thin films deposited at room temperature by thermal evaporation on Corning glass substrates. A post-deposition thermal treatment up to 973 K under atmospheric conditions induces the crystallization of the as-deposited amorphous films with an orthorhombic V2O5 phase with grain sizes around 26 nm. As the annealing temperature rises up to 773 K the electrical conductivity increases. The films exhibit thermoelectric properties with a maximum Seebeck coefficient of −218 ?V/K and electrical conductivity of 5.5 (? m)−1. All the films show NIR-Vis optical transmittance above 60% and optical band gap of 2.8 eV.

Original language	English
Pages (from-to)	590-594
Number of pages	5
Journal	Applied Surface Science
Volume	282
DOIs	https://doi.org/10.1016/j.apsusc.2013.06.016
Publication status	Published - 1 Oct 2013

Keywords

Thermal evaporation
Thermoelectric properties
Thin films
Vanadium pentoxide

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10.1016/j.apsusc.2013.06.016Licence: CC BY-NC-ND

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@article{4957737ca43140cf8d7bceb499b29c42,

title = "Thermoelectric properties of V2O5 thin films deposited by thermal evaporation",

abstract = "a b s t r a c t This work reports the structural, optical, electrical and thermoelectric properties of vanadium pentoxide (V2O5) thin films deposited at room temperature by thermal evaporation on Corning glass substrates. A post-deposition thermal treatment up to 973 K under atmospheric conditions induces the crystallization of the as-deposited amorphous films with an orthorhombic V2O5 phase with grain sizes around 26 nm. As the annealing temperature rises up to 773 K the electrical conductivity increases. The films exhibit thermoelectric properties with a maximum Seebeck coefficient of −218 ?V/K and electrical conductivity of 5.5 (? m)−1. All the films show NIR-Vis optical transmittance above 60% and optical band gap of 2.8 eV.",

keywords = "Thermal evaporation, Thermoelectric properties, Thin films, Vanadium pentoxide",

author = "R. Santos and J. Loureiro and A. Nogueira and Elamurugu Elangovan and Pinto, {J. V.} and Veiga, {J. P.} and T. Busani and E. Fortunato and R. Martins and I. Ferreira",

note = "Sem pdf conforme despacho. The authors thank Dr Sebastian Reparaz from the Phononic and Photonic Nanostructures Group of Catalan Institute of Nanotechnology for the thermal conductivity measurements. This work was supported by FCT-MEC through Strategic PEst-C/CTM/LA0025/2011 and ENIAC/002/2010 projects.",

year = "2013",

month = oct,

day = "1",

doi = "10.1016/j.apsusc.2013.06.016",

language = "English",

volume = "282",

pages = "590--594",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "North-Holland | Elsevier",

}

TY - JOUR

T1 - Thermoelectric properties of V2O5 thin films deposited by thermal evaporation

AU - Santos, R.

AU - Loureiro, J.

AU - Nogueira, A.

AU - Elangovan, Elamurugu

AU - Pinto, J. V.

AU - Veiga, J. P.

AU - Busani, T.

AU - Fortunato, E.

AU - Martins, R.

AU - Ferreira, I.

N1 - Sem pdf conforme despacho. The authors thank Dr Sebastian Reparaz from the Phononic and Photonic Nanostructures Group of Catalan Institute of Nanotechnology for the thermal conductivity measurements. This work was supported by FCT-MEC through Strategic PEst-C/CTM/LA0025/2011 and ENIAC/002/2010 projects.

PY - 2013/10/1

Y1 - 2013/10/1

N2 - a b s t r a c t This work reports the structural, optical, electrical and thermoelectric properties of vanadium pentoxide (V2O5) thin films deposited at room temperature by thermal evaporation on Corning glass substrates. A post-deposition thermal treatment up to 973 K under atmospheric conditions induces the crystallization of the as-deposited amorphous films with an orthorhombic V2O5 phase with grain sizes around 26 nm. As the annealing temperature rises up to 773 K the electrical conductivity increases. The films exhibit thermoelectric properties with a maximum Seebeck coefficient of −218 ?V/K and electrical conductivity of 5.5 (? m)−1. All the films show NIR-Vis optical transmittance above 60% and optical band gap of 2.8 eV.

AB - a b s t r a c t This work reports the structural, optical, electrical and thermoelectric properties of vanadium pentoxide (V2O5) thin films deposited at room temperature by thermal evaporation on Corning glass substrates. A post-deposition thermal treatment up to 973 K under atmospheric conditions induces the crystallization of the as-deposited amorphous films with an orthorhombic V2O5 phase with grain sizes around 26 nm. As the annealing temperature rises up to 773 K the electrical conductivity increases. The films exhibit thermoelectric properties with a maximum Seebeck coefficient of −218 ?V/K and electrical conductivity of 5.5 (? m)−1. All the films show NIR-Vis optical transmittance above 60% and optical band gap of 2.8 eV.

KW - Thermal evaporation

KW - Thermoelectric properties

KW - Thin films

KW - Vanadium pentoxide

U2 - 10.1016/j.apsusc.2013.06.016

DO - 10.1016/j.apsusc.2013.06.016

M3 - Article

SN - 0169-4332

VL - 282

SP - 590

EP - 594

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Thermoelectric properties of V2O5 thin films deposited by thermal evaporation

Abstract

Keywords

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