Thermal dehydrogenation of amorphous silicon: A time-evolution study

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Abstract

A model is proposed to describe the decrease of H content in hydrogenated amorphous silicon (a-Si:H),during annealing at a fixed temperature. H content has been measured in several a-Si:H samples (grown byplasma enhanced chemical vapor deposition) after being submitted to different annealing times at 400 °C.Obtained data has been fitted to the proposed model and initial diffusion coefficients of 3.2 × 10^14cm2/sfor intrinsic films and 4.2 × 10-14cm2/s for n-type films were obtained. Reversely, H content evolution canbe predicted during a thermal treatment if diffusion coefficients are previously known.
Original languageUnknown
Pages (from-to)48-50
JournalTHIN SOLID FILMS
Volume543
Issue numberNA
DOIs
Publication statusPublished - 1 Jan 2013

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