Thermal Assisted Switching Magnetic Tunnel Junctions as FPGA Memory Elements

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Abstract

This paper reports the on-going progress in developing a Thermal Assisted Switching Magnetic RAM (TAS-MRAM) based memory element as an alternative to both SRAM based memory elements and flash based memory elements in the context of Field Programmable Gate Arrays (FPGA)
Original languageUnknown
Title of host publication-
Pages332-336
Publication statusPublished - 1 Jan 2009
Event16th International Conference on Mixed Design of Integrated Circuits and Systems -
Duration: 1 Jan 2009 → …

Conference

Conference16th International Conference on Mixed Design of Integrated Circuits and Systems
Period1/01/09 → …

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