The study of high temperature annealing of a-SiC:H films

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 Å) gold film was evaporated on the half area of the a-SiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100°C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.

Original languageEnglish
Title of host publicationAdvanced Materials Forum III - Proceedings of the 3rd International Materials Symposium 2005 and 12th Encontro da Sociedade Portuguesa de Materiais - SPM
EditorsPaula Maria Vilarinho
Place of PublicationZurich, Switzerland
PublisherTrans Tech Publications Ltd
Pages18-22
Number of pages5
VolumePART 1
ISBN (Print)9780878494026
DOIs
Publication statusPublished - 2006
Event3rd International Materials Symposium and 12th Portuguese Materials Society Meeting 2005 - Aveiro, Portugal
Duration: 20 Mar 200523 Mar 2005

Publication series

NameMaterials Science Forum
PublisherTrans Tech Publications Ltd
NumberPART 1
Volume514-516
ISSN (Print)0255-5476

Conference

Conference3rd International Materials Symposium and 12th Portuguese Materials Society Meeting 2005
CountryPortugal
CityAveiro
Period20/03/0523/03/05

Keywords

  • High temperature annealing
  • Silicon carbide
  • Thin film

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    Zhang, S., Hu, Z., Raniero, L., Liao, X., Mercês Ferreira, I. M., Fortunato, E., ... Martins, R. F. D. P. (2006). The study of high temperature annealing of a-SiC:H films. In P. M. Vilarinho (Ed.), Advanced Materials Forum III - Proceedings of the 3rd International Materials Symposium 2005 and 12th Encontro da Sociedade Portuguesa de Materiais - SPM (Vol. PART 1, pp. 18-22). (Materials Science Forum; Vol. 514-516, No. PART 1). Zurich, Switzerland: Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.514-516.18