TY - GEN
T1 - The study of high temperature annealing of a-SiC:H films
AU - Zhang, S.
AU - Hu, Z.
AU - Raniero, L.
AU - Liao, X.
AU - Mercês Ferreira, Isabel Maria
AU - Fortunato, E.
AU - Vilarinho, P.
AU - Perreira, L.
AU - Martins, Rodrigo Ferrão de Paiva
N1 - Sem PDF.
PY - 2006
Y1 - 2006
N2 - A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 Å) gold film was evaporated on the half area of the a-SiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100°C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.
AB - A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 Å) gold film was evaporated on the half area of the a-SiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100°C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.
KW - High temperature annealing
KW - Silicon carbide
KW - Thin film
UR - http://www.scopus.com/inward/record.url?scp=37849042787&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.514-516.18
DO - 10.4028/www.scientific.net/MSF.514-516.18
M3 - Conference contribution
SN - 9780878494026
VL - PART 1
T3 - Materials Science Forum
SP - 18
EP - 22
BT - Advanced Materials Forum III - Proceedings of the 3rd International Materials Symposium 2005 and 12th Encontro da Sociedade Portuguesa de Materiais - SPM
A2 - Vilarinho, Paula Maria
PB - Trans Tech Publications Ltd
CY - Zurich, Switzerland
ER -