TY - JOUR
T1 - The interpretation of the electric and optical properties of a-Si: H films produced by rf glow discharge through dark conductivity, photoconductivity and pulse controlled capacitance-voltage measurements
AU - Martins, R.
AU - Dias, A. G.
AU - Guimarães, L.
N1 - This work was partially supported by Junta Nacional de Investigaq~o Cientifica e Tecnol6gica under research contract no. 321.81/71.
The authors wish to thank "Instituto Nacional Investigaqho Cientifica", "Junta Nacional de Investigaqao Cientifica e Tecnológica", "Universidade Nova de Lisboa", "Fundação Calouste Gulbenkian" and "Direção Geral de Energia" for their financial support for this project.
PY - 1983
Y1 - 1983
N2 - This paper deals with the interpretation of transport properties of amorphous silicon hydrogenated films (a-Si:H) through dark conductivity, photoconductivity and pulse controlled capacitance-voltage measurements. a-Si:H films were produced by rf glow discharge coupled either inductively or capacitively to a 3% SiH4/Ar mixture at different crossed electromagnetic static fields. The data concerned with the dark activation energy, photoactivation energy, variation of the density of localized states and photosensitivity, (σph/σd)25°C, of a-Si:H films can account for their optoelectronic properties which are strongly dependent on the deposition parameters. We also observed that crossed electromagnetic static fields applied during film formation influences hydrogen incorporation in a different manner than previously proposed.
AB - This paper deals with the interpretation of transport properties of amorphous silicon hydrogenated films (a-Si:H) through dark conductivity, photoconductivity and pulse controlled capacitance-voltage measurements. a-Si:H films were produced by rf glow discharge coupled either inductively or capacitively to a 3% SiH4/Ar mixture at different crossed electromagnetic static fields. The data concerned with the dark activation energy, photoactivation energy, variation of the density of localized states and photosensitivity, (σph/σd)25°C, of a-Si:H films can account for their optoelectronic properties which are strongly dependent on the deposition parameters. We also observed that crossed electromagnetic static fields applied during film formation influences hydrogen incorporation in a different manner than previously proposed.
UR - http://www.scopus.com/inward/record.url?scp=0020807008&partnerID=8YFLogxK
U2 - 10.1016/0022-3093(83)90404-0
DO - 10.1016/0022-3093(83)90404-0
M3 - Article
AN - SCOPUS:0020807008
VL - 57
SP - 9
EP - 22
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
SN - 0022-3093
IS - 1
ER -