The interpretation of the electric and optical properties of a-Si: H films produced by rf glow discharge through dark conductivity, photoconductivity and pulse controlled capacitance-voltage measurements

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Abstract

This paper deals with the interpretation of transport properties of amorphous silicon hydrogenated films (a-Si:H) through dark conductivity, photoconductivity and pulse controlled capacitance-voltage measurements. a-Si:H films were produced by rf glow discharge coupled either inductively or capacitively to a 3% SiH4/Ar mixture at different crossed electromagnetic static fields. The data concerned with the dark activation energy, photoactivation energy, variation of the density of localized states and photosensitivity, (σphd)25°C, of a-Si:H films can account for their optoelectronic properties which are strongly dependent on the deposition parameters. We also observed that crossed electromagnetic static fields applied during film formation influences hydrogen incorporation in a different manner than previously proposed.

Original languageEnglish
Pages (from-to)9-22
Number of pages14
JournalJournal of Non-Crystalline Solids
Volume57
Issue number1
DOIs
Publication statusPublished - 1983

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