The electronic transport mechanism in indium molybdenum oxide thin films RF sputtered at room temperature

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Abstract

Indium molybdenum oxide (IMO) thin films were radio-frequency (RF) sputtered at room temperature (RT) and studied as a function of base pressure (BP). The crystallinity of the films is decreased with the increase in BP. A maximum mobility (mu) of 49.6 cm(2) V-1 s(-1) was obtained from the IMO films deposited at RT without any post-annealing treatment. The electronic behaviour of the deposited films was investigated by temperature-dependent (100-550 K) Hall measurements. Study on the scattering mechanisms based on the experimental data and theoretical models show that the ionized scattering centres are dominating. The films possess wide work function (4.91 eV) and high transmittance (> 70%) over visible and near infrared (NIR) range. The obtained results, especially the high work function and NIR transmittance, are very promising particularly in applications such as optical detectors and solar cells.
Original languageUnknown
Pages (from-to)36002-p1-36002-p6
JournalEpl
Volume97
Issue number3
DOIs
Publication statusPublished - 1 Jan 2012

Cite this

@article{a0d4420c71534d19bdefd9f6470e4cff,
title = "The electronic transport mechanism in indium molybdenum oxide thin films RF sputtered at room temperature",
abstract = "Indium molybdenum oxide (IMO) thin films were radio-frequency (RF) sputtered at room temperature (RT) and studied as a function of base pressure (BP). The crystallinity of the films is decreased with the increase in BP. A maximum mobility (mu) of 49.6 cm(2) V-1 s(-1) was obtained from the IMO films deposited at RT without any post-annealing treatment. The electronic behaviour of the deposited films was investigated by temperature-dependent (100-550 K) Hall measurements. Study on the scattering mechanisms based on the experimental data and theoretical models show that the ionized scattering centres are dominating. The films possess wide work function (4.91 eV) and high transmittance (> 70{\%}) over visible and near infrared (NIR) range. The obtained results, especially the high work function and NIR transmittance, are very promising particularly in applications such as optical detectors and solar cells.",
keywords = "OPTICAL-PROPERTIES, DENSITY PLASMA-EVAPORATION, DOPED IN2O3 FILMS, TIN-OXIDE, OXYGEN, TRANSPARENT CONDUCTING OXIDES, PULSED-LASER DEPOSITION, ITO, ZINC-OXIDE, ELECTRICAL-PROPERTIES",
author = "Fortunato, {Elvira Maria Correia} and Martins, {Rodrigo Ferr{\~a}o de Paiva}",
note = "Sem PDF conforme despacho",
year = "2012",
month = "1",
day = "1",
doi = "10.1209/0295-5075/97/36002",
language = "Unknown",
volume = "97",
pages = "36002--p1--36002--p6",
journal = "Epl",
issn = "0295-5075",
publisher = "EPL ASSOCIATION, EUROPEAN PHYSICAL SOCIETY",
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TY - JOUR

T1 - The electronic transport mechanism in indium molybdenum oxide thin films RF sputtered at room temperature

AU - Fortunato, Elvira Maria Correia

AU - Martins, Rodrigo Ferrão de Paiva

N1 - Sem PDF conforme despacho

PY - 2012/1/1

Y1 - 2012/1/1

N2 - Indium molybdenum oxide (IMO) thin films were radio-frequency (RF) sputtered at room temperature (RT) and studied as a function of base pressure (BP). The crystallinity of the films is decreased with the increase in BP. A maximum mobility (mu) of 49.6 cm(2) V-1 s(-1) was obtained from the IMO films deposited at RT without any post-annealing treatment. The electronic behaviour of the deposited films was investigated by temperature-dependent (100-550 K) Hall measurements. Study on the scattering mechanisms based on the experimental data and theoretical models show that the ionized scattering centres are dominating. The films possess wide work function (4.91 eV) and high transmittance (> 70%) over visible and near infrared (NIR) range. The obtained results, especially the high work function and NIR transmittance, are very promising particularly in applications such as optical detectors and solar cells.

AB - Indium molybdenum oxide (IMO) thin films were radio-frequency (RF) sputtered at room temperature (RT) and studied as a function of base pressure (BP). The crystallinity of the films is decreased with the increase in BP. A maximum mobility (mu) of 49.6 cm(2) V-1 s(-1) was obtained from the IMO films deposited at RT without any post-annealing treatment. The electronic behaviour of the deposited films was investigated by temperature-dependent (100-550 K) Hall measurements. Study on the scattering mechanisms based on the experimental data and theoretical models show that the ionized scattering centres are dominating. The films possess wide work function (4.91 eV) and high transmittance (> 70%) over visible and near infrared (NIR) range. The obtained results, especially the high work function and NIR transmittance, are very promising particularly in applications such as optical detectors and solar cells.

KW - OPTICAL-PROPERTIES

KW - DENSITY PLASMA-EVAPORATION

KW - DOPED IN2O3 FILMS

KW - TIN-OXIDE

KW - OXYGEN

KW - TRANSPARENT CONDUCTING OXIDES

KW - PULSED-LASER DEPOSITION

KW - ITO

KW - ZINC-OXIDE

KW - ELECTRICAL-PROPERTIES

U2 - 10.1209/0295-5075/97/36002

DO - 10.1209/0295-5075/97/36002

M3 - Article

VL - 97

SP - 36002-p1-36002-p6

JO - Epl

JF - Epl

SN - 0295-5075

IS - 3

ER -