The effects of ZnO coating on the photoluminescence properties of porous silicon for the advanced optoelectronic devices

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

In the present work we investigate, the role of zinc oxide (ZnO) thin films passivating layer deposited by rf magnetron sputtering at room temperature on low (18%) and high (80%) porosity porous silicon (PS). The micro-Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM) analysis have been carried out to understand the effect of ZnO films coating on PS. A systematic investigation from Raman spectroscopy suggests the formation of a good quality ZnO wurtzite structure on PS. The photoluminescence (PL) measurements on PS and ZnO coated PS shows a red, blue and UV emission bands at around ∼1.8, ∼2.78 and ∼3.2eV. An enhancement of all PL emission bands have been achieved after ZnO films deposition on high porosity PS.
Original languageEnglish
Pages (from-to)2181-2185
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume354
Issue number19-25
DOIs
Publication statusPublished - 1 May 2008

Fingerprint Dive into the research topics of 'The effects of ZnO coating on the photoluminescence properties of porous silicon for the advanced optoelectronic devices'. Together they form a unique fingerprint.

  • Cite this