Abstract

Indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are simulated using TCAD software. Nonlinearities observed in fabricated devices are obtained through simulation and corresponding physical characteristics are further investigated. For small channel length (below 1 μm) TFTs’ simulations show short channel effects, namely drain-induced barrier lowering (DIBL), and effectively source-channel barrier is shown to decrease with drain bias. Simulations with increasing shallow donor-like states result in transfer characteristics presenting hump-like behavior as typically observed after gate bias stress. Additionally, dual-gate architecture is simulated, exhibiting threshold voltage modulation by the second gate biasing.

Original languageEnglish
Title of host publicationTechnological Innovation for Cyber-Physical Systems: Proceedings of the 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2016
EditorsL. M. Camarinha-Matos , A. J. Falcão, N. Vafaei , S. Najdi
Place of PublicationCham
PublisherSpringer
Pages551-557
Number of pages7
ISBN (Electronic)978-3-319-31165-4
ISBN (Print)978-3-319-31164-7
DOIs
Publication statusPublished - Apr 2016
Event7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2016 - Costa de Caparica, Portugal
Duration: 11 Apr 201613 Apr 2016

Publication series

NameIFIP Advances in Information and Communication Technology
PublisherSpringer
Volume470
ISSN (Print)1868-4238

Conference

Conference7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2016
CountryPortugal
CityCosta de Caparica
Period11/04/1613/04/16

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Keywords

  • CPS
  • DOS
  • IGZO
  • TCAD simulation
  • TFT

Cite this

Martins, J., Barquinha, P., & Goes, J. (2016). TCAD simulation of amorphous indium-gallium-zinc oxide thin-film transistors. In L. M. Camarinha-Matos , A. J. Falcão, N. Vafaei , & S. Najdi (Eds.), Technological Innovation for Cyber-Physical Systems: Proceedings of the 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2016 (pp. 551-557). (IFIP Advances in Information and Communication Technology; Vol. 470). Cham: Springer. https://doi.org/10.1007/978-3-319-31165-4_52