Abstract

This paper deals with a new model and structure able to tailor defects in pin devices. The model assumes the usual density of states profile, including donor and acceptor like states inside the mobility gap and has the capability to simulate the transient and steady state device behavior. The new structure is based in two interfacial defectous layers, located at the junctions, acting as "gettering" centers to tailor the defects. The role of the interlayer and its thickness on device performances will be also discussed.

Original languageEnglish
Pages (from-to)671-674
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume164-166
Issue numberPART 2
DOIs
Publication statusPublished - 2 Dec 1993

Fingerprint Dive into the research topics of 'Tailoring defects on amorphous silicon pin devices'. Together they form a unique fingerprint.

Cite this