Switching characteristic and capacitance analysis of a-Si: H pinpin photodiodes for visible range telecommunications

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Abstract

The device under study is an a-SiC:H/a-Si:H pinpin photodiodes produced by PECVD (Plasma Enhanced Chemical Vapour Deposition) and has a structure that consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure with low conductivity doped layers. This device structure has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. We present in this work experimental results about C-V measurements of the device under complex conditions of illumination. Also it is presented an analysis based on the transient response of the device when illuminated by a pulsed light, with and without optical bias superposition. Rising and decaying times of the collected photocurrent will be outlined under the different conditions. A simulation study outlines the role played by each pin substructure on the response speed and gives some hint on the possible optimization of this device.

Original languageEnglish
Title of host publicationSilicon Photonics and Photonic Integrated Circuits V
PublisherSpie -- the Int Soc for Optical Engineering
Volume9891
ISBN (Electronic)9781510601369
DOIs
Publication statusPublished - 2016
EventSilicon Photonics and Photonic Integrated Circuits V - Brussels, Belgium
Duration: 3 Apr 20167 Apr 2016

Conference

ConferenceSilicon Photonics and Photonic Integrated Circuits V
CountryBelgium
CityBrussels
Period3/04/167/04/16

Keywords

  • Amorphous Silicon
  • CV measurements
  • Optical Capacitance
  • Photodiode
  • Simulation
  • WDM

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  • Cite this

    Fantoni, A., Fernandes, M., Louro, P., & Vieira, M. M. D. A. C. (2016). Switching characteristic and capacitance analysis of a-Si: H pinpin photodiodes for visible range telecommunications. In Silicon Photonics and Photonic Integrated Circuits V (Vol. 9891). [989120] Spie -- the Int Soc for Optical Engineering. https://doi.org/10.1117/12.2227166