Switching characteristic and capacitance analysis of a-Si: H pinpin photodiodes for visible range telecommunications

A. Fantoni; M. Fernandes; P. Louro; Maria Manuela de Almeida Carvalho Vieira

doi:10.1117/12.2227166

Switching characteristic and capacitance analysis of a-Si: H pinpin photodiodes for visible range telecommunications

A. Fantoni, M. Fernandes, P. Louro, Maria Manuela de Almeida Carvalho Vieira

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

The device under study is an a-SiC:H/a-Si:H pinpin photodiodes produced by PECVD (Plasma Enhanced Chemical Vapour Deposition) and has a structure that consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure with low conductivity doped layers. This device structure has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. We present in this work experimental results about C-V measurements of the device under complex conditions of illumination. Also it is presented an analysis based on the transient response of the device when illuminated by a pulsed light, with and without optical bias superposition. Rising and decaying times of the collected photocurrent will be outlined under the different conditions. A simulation study outlines the role played by each pin substructure on the response speed and gives some hint on the possible optimization of this device.

Original language	English
Title of host publication	Silicon Photonics and Photonic Integrated Circuits V
Publisher	Spie -- the Int Soc for Optical Engineering
Volume	9891
ISBN (Electronic)	9781510601369
DOIs	https://doi.org/10.1117/12.2227166
Publication status	Published - 2016
Event	Silicon Photonics and Photonic Integrated Circuits V - Brussels, Belgium Duration: 3 Apr 2016 → 7 Apr 2016

Conference

Conference	Silicon Photonics and Photonic Integrated Circuits V
Country/Territory	Belgium
City	Brussels
Period	3/04/16 → 7/04/16

Keywords

Amorphous Silicon
CV measurements
Optical Capacitance
Photodiode
Simulation
WDM

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10.1117/12.2227166

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@inproceedings{5e025baa1ae4445b9bd00f99d9556974,

title = "Switching characteristic and capacitance analysis of a-Si: H pinpin photodiodes for visible range telecommunications",

abstract = "The device under study is an a-SiC:H/a-Si:H pinpin photodiodes produced by PECVD (Plasma Enhanced Chemical Vapour Deposition) and has a structure that consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure with low conductivity doped layers. This device structure has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. We present in this work experimental results about C-V measurements of the device under complex conditions of illumination. Also it is presented an analysis based on the transient response of the device when illuminated by a pulsed light, with and without optical bias superposition. Rising and decaying times of the collected photocurrent will be outlined under the different conditions. A simulation study outlines the role played by each pin substructure on the response speed and gives some hint on the possible optimization of this device.",

keywords = "Amorphous Silicon, CV measurements, Optical Capacitance, Photodiode, Simulation, WDM",

author = "A. Fantoni and M. Fernandes and P. Louro and Vieira, {Maria Manuela de Almeida Carvalho}",

note = "Sem PDF.; Silicon Photonics and Photonic Integrated Circuits V ; Conference date: 03-04-2016 Through 07-04-2016",

year = "2016",

doi = "10.1117/12.2227166",

language = "English",

volume = "9891",

booktitle = "Silicon Photonics and Photonic Integrated Circuits V",

publisher = "Spie -- the Int Soc for Optical Engineering",

}

Fantoni, A, Fernandes, M, Louro, P & Vieira, MMDAC 2016, Switching characteristic and capacitance analysis of a-Si: H pinpin photodiodes for visible range telecommunications. in Silicon Photonics and Photonic Integrated Circuits V. vol. 9891, 989120, Spie -- the Int Soc for Optical Engineering, Silicon Photonics and Photonic Integrated Circuits V, Brussels, Belgium, 3/04/16. https://doi.org/10.1117/12.2227166

Switching characteristic and capacitance analysis of a-Si: H pinpin photodiodes for visible range telecommunications. / Fantoni, A.; Fernandes, M.; Louro, P. et al.
Silicon Photonics and Photonic Integrated Circuits V. Vol. 9891 Spie -- the Int Soc for Optical Engineering, 2016. 989120.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Switching characteristic and capacitance analysis of a-Si

T2 - Silicon Photonics and Photonic Integrated Circuits V

AU - Fantoni, A.

AU - Fernandes, M.

AU - Louro, P.

AU - Vieira, Maria Manuela de Almeida Carvalho

N1 - Sem PDF.

PY - 2016

Y1 - 2016

N2 - The device under study is an a-SiC:H/a-Si:H pinpin photodiodes produced by PECVD (Plasma Enhanced Chemical Vapour Deposition) and has a structure that consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure with low conductivity doped layers. This device structure has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. We present in this work experimental results about C-V measurements of the device under complex conditions of illumination. Also it is presented an analysis based on the transient response of the device when illuminated by a pulsed light, with and without optical bias superposition. Rising and decaying times of the collected photocurrent will be outlined under the different conditions. A simulation study outlines the role played by each pin substructure on the response speed and gives some hint on the possible optimization of this device.

AB - The device under study is an a-SiC:H/a-Si:H pinpin photodiodes produced by PECVD (Plasma Enhanced Chemical Vapour Deposition) and has a structure that consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure with low conductivity doped layers. This device structure has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. We present in this work experimental results about C-V measurements of the device under complex conditions of illumination. Also it is presented an analysis based on the transient response of the device when illuminated by a pulsed light, with and without optical bias superposition. Rising and decaying times of the collected photocurrent will be outlined under the different conditions. A simulation study outlines the role played by each pin substructure on the response speed and gives some hint on the possible optimization of this device.

KW - Amorphous Silicon

KW - CV measurements

KW - Optical Capacitance

KW - Photodiode

KW - Simulation

KW - WDM

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DO - 10.1117/12.2227166

M3 - Conference contribution

AN - SCOPUS:84982278618

VL - 9891

BT - Silicon Photonics and Photonic Integrated Circuits V

PB - Spie -- the Int Soc for Optical Engineering

Y2 - 3 April 2016 through 7 April 2016

ER -

Switching characteristic and capacitance analysis of a-Si: H pinpin photodiodes for visible range telecommunications

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Keywords

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