Ag2Cu2O3 films were deposited on glass and silicon substrates by RF magnetron sputtering of metallic equimolar (Ag50Cu50) alloy target in Ar-O-2 mixture at different substrate temperature (T-s) ranging between 303 and 523 K. The effect of T-s on the core level binding energies, structural and electrical properties of the films was systematically studied. The films deposited at room temperature were amorphous. The films deposited at 373 K were polycrystalline and the crystallinity was increased when the T-s was increased to 423 K. The films deposited at 423 K and subsequently annealed at 498 K exhibits single phase Ag2Cu2O3. In the case of films deposited at higher T-s of 523 K, Ag2O was decomposed into Ag. The electrical resistivity of the films deposited at 303 K was 1.2 x 10(-5) Omega cm, whereas the films formed at 423 K and subsequently annealed at 498 K showed electrical resistivity of 2.2 x 10(-3) Omega cm due to improvement in the crystallinity of single phase Ag2Cu2O3.
|Title of host publication||ACTA PHYSICA POLONICA A|
|Publication status||Published - 1 Jan 2011|
|Event||Fall Meeting of the European-Materials-Research-Society (E-MRS) - |
Duration: 1 Jan 2011 → …
|Conference||Fall Meeting of the European-Materials-Research-Society (E-MRS)|
|Period||1/01/11 → …|