Study of the sensing mechanism of SnO2 thin-film gas sensors using hall effect measurements

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Abstract

Hall effect measurements are one of the most powerful techniques for obtaining information about the conduction mechanism in polycrystalline semiconductor materials, which is the basis for understanding semiconductor gas sensors. In order to investigate the correlation between the microscopic characteristics and the macroscopic performances exhibited by undoped tin oxide gas sensors deposited by spray pyrolysis, Hall effect measurements were performed at different temperatures, from room temperature up to 500 K, and in the presence of two different atmospheres, air and methane. From these measurements, it was possible to infer the potential barrier and its dependence with the used atmosphere. The obtained results were analysed in terms of the oxygen mechanism at grain boundaries on the basis of the grain boundary-trapping model. In the presence of methane gas, the electrical resistivity decreases due to the lowering of the inter-grain boundary barrier height.
Original languageEnglish
Title of host publicationKey Engineering Materials
Pages357-360
Number of pages4
Volume230-2
DOIs
Publication statusPublished - 1 Jan 2002
Event1st International Materials Symposium (Materials 2001) - Universidade de Coimbra, Coimbra, Portugal
Duration: 9 Apr 200111 Apr 2001

Conference

Conference1st International Materials Symposium (Materials 2001)
CountryPortugal
CityCoimbra
Period9/04/0111/04/01

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