Abstract
This paper deals with the structure, composition and electro-optical characteristics of n-type amorphous and microcrystalline silicon thin films produced by plasma-enhanced chemical vapour deposition in a hydrogenhelium mixture. In addition, special emphasis is given to the role that hydrogen incorporation plays in the film's properties and in the characteristics of n-type microcrystalline films presenting simultaneously optical gaps of about 2·3 eV (controlled by the hydrogen content in the film), a dark conductivity of 6-5S cm-1 and a Hall mobility of about 0·86 cm2 V-1 s-1, the highest combined values for n-type microcrystalline silicon films, as far as we know.
| Original language | English |
|---|---|
| Pages (from-to) | 249-258 |
| Number of pages | 10 |
| Journal | Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties |
| Volume | 76 |
| Issue number | 3 |
| Publication status | Published - Sep 1997 |
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Martins, R., Maçarico, A., Vieira, M., Ferreira, I., & Fortunato, E. (1997). Structure, composition and electro-optical properties of n-type amorphous and microcrystalline silicon thin films. Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, 76(3), 249-258.