Abstract
Molybdenum doped indium oxide (IO) thin films were deposited on the Coring F1737 glass substrates at 400 degrees C by spray pyrolysis technique. The Mo doping was varied between 0 and 4 at.%. The films were characterized by their structural, electrical and optical properties. The films are confirmed to be cubic bixbyite In(2)O(3) with a strongest orientation along (222) for 0.5 at.% Mo, which is shifted to (400) plane when the Mo doping is increased to >= 1.2 at.%. The films deposited with 0.5 at.% Mo showed high mobility of similar to 90 cm(2)/Vs, resistivity of similar to 6.8 x 10(-4) Omega cm and carrier concentration of similar to 1.01 x 10(20)cm(-3) with >similar to 73% transmittance in the visible range between 500 and 800 nm. The transmittance is well extended into near infrared region.
Original language | Unknown |
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Pages (from-to) | 1554-1557 |
Journal | Physica Status Solidi A-Applications And Materials Science |
Volume | 207 |
Issue number | 7 |
DOIs | |
Publication status | Published - 1 Jan 2010 |