Structural, free-charge carrier and phonon properties of Zinc-blende and wurtizte polymorphs in InN epitaxial layers

Research output: Other contribution


ICNS-10 10th International Conference on Nitride Semiconductors. August 25-30, 2013, Washington, DC
Abstract Book A: Bulk and Film Growth AP3:18, p.135.
Original languageUnknown
Publication statusPublished - 1 Jan 2013

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