TY - PAT
T1 - Storing medium for electrical charges in self-sustaining (supporting) field-effect transistors with paper dielectric based on cellulose fibers and its fabrication process
AU - Martins, Rodrigo Ferrao De Paiva
AU - Fortunato, Elvira Maria Correia
AU - Barquinha, Pedro Miguel Cândido
AU - Pereira, Luis Miguel Nunes
AU - Correia, Nuno Filipe de Oliveira
PY - 2011/2/9
Y1 - 2011/2/9
N2 - The present invention refers to the use and creation of materials based on natural cellulose fibbers, synthetic fibbers, or mixed fibbers as physical support and storing medium or storage inducer of electrical and ionic charges in self-sustaining discrete or complementary field-effect transistors with non-volatile memory by using organic or inorganic active semiconductors for the manufacture of the channel regions that are deposited on the fibbers of the paper material as well as metals or passive semiconductors for manufacturing drain and source allowing the interconnection of fibbers, in addition to the gate electrode contact existing on the other side-face of the paper, p or n type respectively, in monolithic or hybrid forms.
AB - The present invention refers to the use and creation of materials based on natural cellulose fibbers, synthetic fibbers, or mixed fibbers as physical support and storing medium or storage inducer of electrical and ionic charges in self-sustaining discrete or complementary field-effect transistors with non-volatile memory by using organic or inorganic active semiconductors for the manufacture of the channel regions that are deposited on the fibbers of the paper material as well as metals or passive semiconductors for manufacturing drain and source allowing the interconnection of fibbers, in addition to the gate electrode contact existing on the other side-face of the paper, p or n type respectively, in monolithic or hybrid forms.
M3 - Regional/Other National Application
M1 - EP2282359
Y2 - 2009/03/20
ER -